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Browsing by Author "Fadida, Sivan"

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    Band alignment of Hf–Zr oxides on Al2O3/GeO2/Ge stacks

    Fadida, Sivan
    ;
    Eisenberg, Moshe
    ;
    Nyns, Laura  
    ;
    Van Elshocht, Sven  
    ;
    Caymax, Matty  
    Journal article
    2011, Microelectronic Engineering, (88) 7, p.1557-1559
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    Correlation between current-voltage measurements and the barrier height determined by XPS in Ge p-MOS capacitors

    Fadida, Sivan
    ;
    Palumbo, F
    ;
    Nyns, Laura  
    ;
    Lin, Dennis  
    ;
    Van Elshocht, Sven  
    ;
    Caymax, Matty  
    Meeting abstract
    2013, AVS 60th International Symposium & Exhibition, 27/10/2013, p.8
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    Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack

    Fadida, Sivan
    ;
    Shekhter, P.
    ;
    Cvetko, D.
    ;
    Floreano, L.
    ;
    Verdini, A
    ;
    Nyns, Laura  
    ;
    Van Elshocht, Sven  
    Journal article
    2014, Journal of Applied Physics, (116) 16, p.164101
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    Effect of remote oxygen scavenging on electrical properties of Ge-based metal-oxide-semiconductor capacitors

    Fadida, Sivan
    ;
    Nyns, Laura  
    ;
    Van Elshocht, Sven  
    ;
    Eizenberg, Moshe
    Journal article
    2017, Journal of Electronic Materials, (46) 1, p.386-392
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    Hf-based high-k dielectrics for p-Ge MOS gate stacks

    Fadida, Sivan
    ;
    Palumbo, Felix
    ;
    Nyns, Laura  
    ;
    Lin, Dennis  
    ;
    Van Elshocht, Sven  
    ;
    Caymax, Matty  
    Journal article
    2014, Journal of Vacuum Science and Technology B, (32) 3, p.03D105
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    Ti as a reactive gate electrode on high-k/p-Ge MOS capacitors

    Fadida, Sivan
    ;
    Nyns, Laura  
    ;
    Lin, Dennis  
    ;
    Van Elshocht, Sven  
    ;
    Caymax, Matty  
    ;
    Eizenberg, Moshe
    Meeting abstract
    2014, 18th Workshop on Dielectrics in Microelectronics - WODIM, 9/06/2014

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