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Browsing by Author "Fanciulli, M."

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    Active trap determination at the interface of Ge and In0.53Ga0.47As substrates with dielectric layers

    Molle, A.
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    Baldovino, S.
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    Lamagna, L.
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    Spiga, S.
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    Lamperti, A.
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    Fanciulli, M.
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    Tsoutsou, D.
    Proceedings paper
    2011, Physics and Technology of High-k Materials 9, 9/10/2011, p.203-221
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    Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories

    Nardi, F.
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    Ielmini, D.
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    Cagli, C.
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    Spiga, S.
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    Fanciulli, M.
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    Goux, Ludovic  
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    Wouters, Dirk
    Journal article
    2011, Solid-State Electronics, (58) 1, p.42-47
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    Ge-based interface passivation for atomic layer deposited La-doped ZrO2

    Molle, A.
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    Brammertz, Guy  
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    Lamagna, L.
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    Fanciulli, M.
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    Meuris, Marc  
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    Spiga, S.
    Journal article
    2009, Applied Physics Letters, (95) 2, p.23507
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    Ge-based passivation for high permittivity oxide deposition on III-V compounds substrates

    Molle, A.
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    Spiga, S.
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    Lamagna, L.
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    Fanciulli, M.
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    Brammertz, Guy  
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    Meuris, Marc  
    Meeting abstract
    2009, Abstracts 6th International Conference on Silicon Epitaxy and Heterostructures - ICSI-6, 17/05/2009, p.158
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    Integrated functional oxides in non-volatile memory devices

    Muller, Christophe
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    Courtade, Lorene
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    Turquat, Ch.
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    Menou, Nicolas
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    Lisoni, Judit
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    Goux, Ludovic  
    Meeting abstract
    2008, Workshop Oxydes Fontionnels pour l'Integration en Micro- et Nano-Electronique, 16/03/2008
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    Interface engineering for Ge metal-oxide-semiconductor devices

    dimoulas, A.
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    Brunco, David
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    Ferrari, S.
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    Seo, J.W.
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    Panayiotatos, Y.
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    Sotiropoulos, A.
    Journal article
    2007, Thin Solid Films 515, (515) 16, p.6337-6943
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    X-ray and ToF-SIMS comparison of resistive switching NiO films obtained from controlled Ni thermal oxidation, e-beam and ALD

    Lamperti, A.
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    Courtade, Lorene
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    Lisoni, Judit
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    Goux, Ludovic  
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    Turquat, C.
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    Spiga, Sabina
    Oral presentation
    2008, E-MRS Spring Meeting Symposium H: Materials and Emerging Technologies fro Non-Volatile-Memory Devices

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