Browsing by Author "Fanciulli, M."
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Publication Active trap determination at the interface of Ge and In0.53Ga0.47As substrates with dielectric layers
;Molle, A. ;Baldovino, S. ;Lamagna, L. ;Spiga, S. ;Lamperti, A. ;Fanciulli, M.Tsoutsou, D.Proceedings paper2011, Physics and Technology of High-k Materials 9, 9/10/2011, p.203-221Publication Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories
Journal article2011, Solid-State Electronics, (58) 1, p.42-47Publication Ge-based interface passivation for atomic layer deposited La-doped ZrO2
Journal article2009, Applied Physics Letters, (95) 2, p.23507Publication Ge-based passivation for high permittivity oxide deposition on III-V compounds substrates
Meeting abstract2009, Abstracts 6th International Conference on Silicon Epitaxy and Heterostructures - ICSI-6, 17/05/2009, p.158Publication Integrated functional oxides in non-volatile memory devices
Meeting abstract2008, Workshop Oxydes Fontionnels pour l'Integration en Micro- et Nano-Electronique, 16/03/2008Publication Interface engineering for Ge metal-oxide-semiconductor devices
;dimoulas, A. ;Brunco, David ;Ferrari, S. ;Seo, J.W. ;Panayiotatos, Y.Sotiropoulos, A.Journal article2007, Thin Solid Films 515, (515) 16, p.6337-6943Publication X-ray and ToF-SIMS comparison of resistive switching NiO films obtained from controlled Ni thermal oxidation, e-beam and ALD
Oral presentation2008, E-MRS Spring Meeting Symposium H: Materials and Emerging Technologies fro Non-Volatile-Memory Devices