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Browsing by Author "Farvacque, J. L."

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    2DEG mobility in AlGaN-GaN structures grown by LP-MOVPE

    Bougrioua, Zahia
    ;
    Farvacque, J. L.
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    Moerman, Ingrid  
    ;
    Carosella, F.
    Journal article
    2001, Physica Status Solidi B, (228) 2, p.625-628
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    Electrical characteristics of n-type GaN grown by LP-MOVPE

    Bougrioua, Zahia
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    Farvacque, J. L.
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    Moerman, Ingrid  
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    Thrush, E. J.
    Oral presentation
    1999, 1st Arab Congress on Materials Science - ACMS-1
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    Free-carrier mobility in GaN in the pPresence of dislocation walls

    Farvacque, J. L.
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    Bougrioua, Zahia
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    Moerman, Ingrid  
    Journal article
    2001, Physical Review B, (63) 11, p.5202-5209
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    Material optimisation for AlGaN/GaN HFET applications

    Bougrioua, Zahia
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    Moerman, Ingrid  
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    Sharma, N.
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    Wallis, R. H.
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    Cheyns, Jan
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    Jacobs, Koen
    Journal article
    2001, Journal of Crystal Growth, (230) 3_4, p.573-578
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    Mobilité dans GaN en présence de parois de dislocations

    Farvacque, J. L.
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    Bougrioua, Zahia
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    Moerman, Ingrid  
    Oral presentation
    2001, GDR-CNRS 1050 - Semiconducteurs à large bande interdite; 21-23 May 2001; Grenoble, France.
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    Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE

    Bougrioua, Zahia
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    Farvacque, J. L.
    ;
    Moerman, Ingrid  
    ;
    Demeester, Piet  
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    Harris, J. J.
    ;
    Lee, K.
    Journal article
    1999, Physica Status Solidi B, (216) 1, p.571-576
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    Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE

    Farvacque, J. L.
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    Bougrioua, Zahia
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    Moerman, Ingrid  
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    Van Tendeloo, G.
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    Lebedev, O.
    Journal article
    1999, Physica B, 273-274, p.140-143
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    Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE

    Bougrioua, Zahia
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    Farvacque, J. L.
    ;
    Moerman, Ingrid  
    ;
    Demeester, Piet  
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    Harris, J. J.
    ;
    Lee, K.
    Meeting abstract
    1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.124
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    Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls

    Farvacque, J. L.
    ;
    Bougrioua, Zahia
    ;
    Moerman, Ingrid  
    Journal article
    2000, J. Physics: Condensed Matter, (12) 49, p.10213-10221

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