Browsing by Author "Farvacque, J. L."
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Publication 2DEG mobility in AlGaN-GaN structures grown by LP-MOVPE
Journal article2001, Physica Status Solidi B, (228) 2, p.625-628Publication Electrical characteristics of n-type GaN grown by LP-MOVPE
Oral presentation1999, 1st Arab Congress on Materials Science - ACMS-1Publication Free-carrier mobility in GaN in the pPresence of dislocation walls
Journal article2001, Physical Review B, (63) 11, p.5202-5209Publication Material optimisation for AlGaN/GaN HFET applications
Journal article2001, Journal of Crystal Growth, (230) 3_4, p.573-578Publication Mobilité dans GaN en présence de parois de dislocations
Oral presentation2001, GDR-CNRS 1050 - Semiconducteurs à large bande interdite; 21-23 May 2001; Grenoble, France.Publication Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE
Journal article1999, Physica Status Solidi B, (216) 1, p.571-576Publication Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE
Journal article1999, Physica B, 273-274, p.140-143Publication Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE
Meeting abstract1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.124Publication Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls
Journal article2000, J. Physics: Condensed Matter, (12) 49, p.10213-10221