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Browsing by Author "Fazan, P."

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    Constant-current study of dielectric breakdown of Pb(Zr,Ti)O-3 ferroelectric film capacitors

    Stolichnov, Igor
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    Tagantsev, A.
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    Setter, N.
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    Okhonin, S.
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    Fazan, P.
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    Cross, J. S.
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    Tsukada, M.
    Journal article
    2001, Integrated Ferroelectrics, (32) 1_4, p.45-54
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    FinFETs with Thermally Stable RMG Gate Stack for Future DRAM Peripheral Circuits

    Capogreco, Elena  
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    Arimura, Hiroaki  
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    Ritzenthaler, Romain  
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    Brus, Stephan  
    ;
    Oniki, Yusuke  
    Proceedings paper
    2022, International Electron Devices Meeting (IEDM), DEC 03-07, 2022
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    Impact of channel engineering technology on HC performance of 100 nm MOSFETs

    Okhonin, S.
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    Fazan, P.
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    Kubicek, Stefan  
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    Henson, Kirklen
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    De Meyer, Kristin  
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    Ponomarev, Youri
    Proceedings paper
    2001, Proceedings of the 31st European Solid-State Device Research Conference, 11/09/2001, p.283-286
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    Transient effects in PD SOI MOSFETs and potential DRAM applications

    Okhonin, S.
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    Nagoga, M.
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    Sallese, J.-M.
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    Fazan, P.
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    Faynot, J.
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    Pontcharra, J.
    ;
    Cristoloveanu, S.
    Journal article
    2002, Solid-State Electronics, (46) 11, p.1709-1713

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