imec Institutional Repository Browsing {{ collection }} by Author "Fedler, F."

Publication

AlGaN/GaN based MOSHFETs with different gate dielectrics and treatments

Mistele, D.

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Rotter, T.

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Bougrioua, Z.

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Moerman, Ingrid

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Röver, K.S.

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Seyboth, M.

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Schwegler, V.

Proceedings paper

2002, GaN and Related Alloys 2001, 26/11/2002, p.I6.51

Publication

AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments

Mistele, D.

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Rotter, T.

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Röver, K. S.

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Paprotta, S.

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Bougrioua, Zahia

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Fedler, F.

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Klausing, H.

Oral presentation

2001, MRS Fall Meeting 2001: Symposium I: GaN and related alloys; November 26-30, 2001; Boston, MA, USA.

Publication

Heterostructure field effect transistor types with novel gate dielectrics

Mistele, D.

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Rotter, T.

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Bougrioua, Zahia

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Röver, K. S.

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Fedler, F.

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Klausing, H.

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Stemmer, J.

Journal article

2001, Physica Status Solidi A, (188) 1, p.255-258

Publication

Influence of process technology on DC-performance of GaN-based HFETs

Mistele, D.

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Rotter, T.

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Bougrioua, Z.

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Marso, M.

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Roll, H.

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Klausing, H.

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Fedler, F.

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Semchinova, O.

Journal article

2002, Physica Status Solidi A, (194) 2, p.452-455

Publication

Influence of surface treatments on DC-performance of GaN-based HFETs

Mistele, D.

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Rotter, T.

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Bougrioua, Z.

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Marso, M.

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Roll, H.

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Klausing, H.

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Fedler, F.

Meeting abstract

2002, International Workshop on Nitride Semiconductors, 22/07/2002, p.119

Browsing by Author "Fedler, F."