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Browsing by Author "Fletcher, I."

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    Energy-dispersive x-ray imaging of an InGaN/GaN bilayer on sapphire

    O'Donnell, K. P.
    ;
    Middleton, P. G.
    ;
    Trager-Cowan, C.
    ;
    Young, C.
    ;
    Bayliss, S. C.
    ;
    Fletcher, I.
    Journal article
    1998, Applied Physics Letters, (73) 22, p.3273-3275
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    Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers

    O'Donnell, K. P.
    ;
    Martin, R. W.
    ;
    Middleton, P. G.
    ;
    Bayliss, S. C.
    ;
    Fletcher, I.
    ;
    Van der Stricht, Wim
    Journal article
    1999, Materials Science and Engineering. B, (B59) 1_3, p.288-291
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    The optical and structural properties of InGaN epilayers with very high indium content

    Bayliss, S. C.
    ;
    Demeester, Piet  
    ;
    Fletcher, I.
    ;
    Martin, R. W.
    ;
    Middleton, P. G.
    ;
    Moerman, Ingrid  
    Journal article
    1999, Materials Science and Engineering. B, (B59) 1_3, p.292-297

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