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Browsing by Author "Garfunkel, E. L."

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    Ultrathin (< 4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: understanding the processing, structure, and physical and electrical limits

    Green, Martin
    ;
    Gusev, E. P.
    ;
    Degraeve, Robin  
    ;
    Garfunkel, E. L.
    Journal article
    2001, Journal of Applied Physics, (90) 5, p.2057-2121

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