Browsing by Author "Gille, Thomas"
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Publication Amorphous-crystalline phase transitions in chalcogenide materials for memory applications
Journal article2008, Phase Transitions, (81) 7_8, p.773-790Publication Evidence of the prominent role of the time-under-melt parameter in the reset switching of phase-change line cells
Proceedings paper2008, Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design - NVSMW/ICMTD, 18/05/2008, p.37-38Publication Low-voltage resistive switching within an oxygen-rich Cu/SbTe interface for application in nonvolatile memory
Journal article2008, Electrochemical and Solid-State Letters, (11) 9, p.H245-H247Publication Modeling of the mechanical behavior during programming of a non-volatile phase-change memory cell using a coupled electrical-thermal-mechanical finite-element simulator
Proceedings paper2007, EuroSime: Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, 16/04/2007, p.283-288Publication Stress and mechanical constants characterizations of phase-change SbTe-alloys: influence of the film thickness and substrate
Proceedings paper2007, Materials and Processes for Nonvolatile Memories II, 9/04/2007, p.I12.6Publication Switching between two high-resistive states in Cu/chalcogenide/W structures for application in non-volatile memories
Proceedings paper2007, Proceedings 2nd International Conference on Memory Technology and Design - ICMTD, 7/05/2007, p.151-153Publication Transient characteristics of the reset programming of a phase-change line cell and the effect of the reset parameters on the obtained state
Journal article2009, IEEE Transactions on Electron Devices, (56) 7, p.1499-1506