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Browsing by Author "Grietens, Bob"

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    1.7-1.9 μm InxGa1-xAs/InyAl1-yAs light-emitting diodes lattice-mismatched grown on GaAs

    Murti, M. R.
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    Grietens, Bob
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    Van Hoof, Chris  
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    Borghs, Gustaaf  
    Journal article
    1995, J. Appl. Phys., (78) 1, p.578-80
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    Characterization of GaAs/AlAsSb/GaSb heterostructures prepared by MBE

    Srnanek, R.
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    Nemeth, Stefan  
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    Kovac, J.
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    Satka, A.
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    Skriniarova, J.
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    Jakabovic, J.
    ;
    Kicin, S.
    Proceedings paper
    1995, Semiconductor Heteroepitaxy. Growth, Characterization and Device Applications; 4-7 July 1995; Montpellier, France., p.680-3
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    Classification of morphological defects on GaAs/AlAsSb/GaSb structures prepared by MBE

    Srnánek, R.
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    Nemeth, Stefan  
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    Kovác, J.
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    Kicin, S.
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    Grietens, Bob
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    Borghs, Gustaaf  
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    Novák, J.
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    Sestáková, V.
    Journal article
    1996, Journal of Crystal Growth, 165, p.156-158
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    Compositional dependence of AlAsySb1-y ternaries on the ratio of Sb/As fluxes and on the substrate temperature

    Nemeth, Stefan  
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    Grietens, Bob
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    Borghs, Gustaaf  
    Journal article
    1995, J. Appl. Phys., (77) 7, p.3552-3
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    Effect of mixing enthalpy on relaxed and strained growth of III-Vy IV1-y II compound alloys using molecular-beam epitaxy

    Genoe, Jan  
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    Nemeth, Stefan  
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    Grietens, Bob
    ;
    Behet, Markus
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    Vounckx, Roger  
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    Borghs, Gustaaf  
    Journal article
    2000, Journal of Applied Physics, (87) 1, p.564-571
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    Effect of strain on mid-IR and LWIR lasers and detectors

    Jain, Suresh
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    Van Hoof, Chris  
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    Grietens, Bob
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    Nemeth, Stefan  
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    Merken, Patrick
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    Borghs, Gustaaf  
    Oral presentation
    1996, International Conference on Semiconductor Materials and Technology; December 16-21, 1996; Delhi, India.
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    Growth and characterisation of mid-IR InAs0.9Sb0.1/InAs strained multiple quantum well light emitting diodes grown on InAs substrates

    Grietens, Bob
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    Nemeth, Stefan  
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    Van Hoof, Chris  
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    Van Daele, Peter  
    ;
    Borghs, Gustaaf  
    Journal article
    1997, IEE Proceedings - Optoelectronics, (144) 5, p.295-298
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    Growth and characterization of AlAsySb1-y and InAsSb1-y thin films on GaAs and InAs substrates

    Nemeth, Stefan  
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    Grietens, Bob
    ;
    Borghs, Gustaaf  
    Journal article
    1998, Thin Solid Films, (317) 1_2, p.52-54
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    Growth and characterization of bulk AlAsSb and InAsSb on GaAs and InAs substrates

    Nemeth, Stefan  
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    Grietens, Bob
    ;
    Borghs, Gustaaf  
    Oral presentation
    1996, 10th International Conference on Thin Films and 5th European Vacuum Conference; September 23-27, 1996; Salamanca, Spain.
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    Growth and characterization of InAsySb1-y based far-infrared diodes lattice-mismatched grown on InAs substrates

    Grietens, Bob
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    Nemeth, Stefan  
    ;
    Borghs, Gustaaf  
    Proceedings paper
    1996, Proceedings 3rd Bratislava Days on MBE; May 16-17, 1996. Bratislava, Slovak Republic., p.57-60
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    Growth and characterization of mid-infrared InAsSb/InAs strained multiple quantum well light-emitting diodes grown on InAs substrates

    Grietens, Bob
    ;
    Nemeth, Stefan  
    ;
    Borghs, Gustaaf  
    Oral presentation
    1996, Mid-infrared Optoelectronics, Materials and Devices; September 17-18, 1996; Lancaster, U.K.
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    Growth and characterization of mid-infrared InGaAs/InAlAs strained triple quantum-well light-emitting diodes grown on lattice-mismatched GaAs substrates

    Grietens, Bob
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    Van Hoof, Chris  
    ;
    Van Daele, Peter  
    ;
    Borghs, Gustaaf  
    Journal article
    1996, Journal of Applied Physics, (80) 7, p.4177-4181
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    InAs/(GaIn)Sb superlattices for mid-IR optoelectronics: strain optimization by controlled interface formation

    Wagner, J.
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    Schmitz, Jurriaan
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    Herres, N.
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    Fuchs, F.
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    Serries, D.
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    Grietens, Bob
    ;
    Nemeth, Stefan  
    Journal article
    1998, Physica E: Low-Dimensional Systems & Nanostructures, 2, p.320-324
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    Infrared light-emitting components in III-V materials

    Grietens, Bob
    PHD thesis
    1998-03
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    Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor Ga1-xMnxAs

    Van Esch, Ann
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    Van Bockstal, L.
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    De Boeck, Jo  
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    Verbanck, G.
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    van Steenbergen, A. S.
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    Wellmann, P. J.
    Journal article
    1997, Physical Review B, (56) 20, p.13103-13112
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    Micromachined poly-SiGe bolometer arrays for infrared imaging and spectroscopy

    Leonov, Vladimir  
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    Perova, Natalia A.
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    De Moor, Piet  
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    Du Bois, Bert  
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    Goessens, Claus
    ;
    Grietens, Bob
    Proceedings paper
    2003, MEMS/MOEMS: Advances in Photonics Communications, Sensing, Metrology, Packaging and Assembly, 28/10/2002, p.54-63
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    Mid-infra-red In GaAs light-emitting diodes for optical gas sensing grown on lattice-mismatched substrates

    Grietens, Bob
    ;
    Murti, M. R.
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    Van Hoof, Chris  
    ;
    Borghs, Gustaaf  
    Journal article
    1995, Electronics Letters, (31) 6, p.502-3
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    Mid-infrared LEDs using InAs(0.71)Sb(0.29)/InAs(0.25)In(0.75)As/inAs strained layer superlatticed active layers

    Van Hoof, Chris  
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    Nemeth, Stefan  
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    Grietens, Bob
    ;
    Dessein, Kristof
    ;
    Genoe, Jan  
    ;
    Merken, Patrick
    Proceedings paper
    1998, ASDAM '98, Conference Proceedings 2nd International Conference on Advanced Semiconductor Devices and Microsystems, 5/10/1998, p.287-290
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    Molecular beam epitaxial growth of AlAsySb1-y on InAs substrates

    Nemeth, Stefan  
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    Grietens, Bob
    ;
    Borghs, Gustaaf  
    Proceedings paper
    1996, Proceedings 3rd Bratislava Days on MBE; May 16-17, 1996; Bratislava, Slovak Republic., p.61-64
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    Molecular beam epitaxial growth of bulk AlAs0.16Sb0.84 and AlAs0.16Sb0.84/InAs superlattices on lattice-matched InAs substrates

    Nemeth, Stefan  
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    Grietens, Bob
    ;
    Bender, Hugo  
    ;
    Borghs, Gustaaf  
    Journal article
    1997, Japanese J. of Appl. Phys. Part 1, (36) 6A, p.3426-3428
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