Browsing by Author "Grietens, Bob"
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Publication 1.7-1.9 μm InxGa1-xAs/InyAl1-yAs light-emitting diodes lattice-mismatched grown on GaAs
Journal article1995, J. Appl. Phys., (78) 1, p.578-80Publication Characterization of GaAs/AlAsSb/GaSb heterostructures prepared by MBE
Proceedings paper1995, Semiconductor Heteroepitaxy. Growth, Characterization and Device Applications; 4-7 July 1995; Montpellier, France., p.680-3Publication Classification of morphological defects on GaAs/AlAsSb/GaSb structures prepared by MBE
;Srnánek, R.; ;Kovác, J. ;Kicin, S. ;Grietens, Bob; ;Novák, J.Sestáková, V.Journal article1996, Journal of Crystal Growth, 165, p.156-158Publication Compositional dependence of AlAsySb1-y ternaries on the ratio of Sb/As fluxes and on the substrate temperature
Journal article1995, J. Appl. Phys., (77) 7, p.3552-3Publication Effect of mixing enthalpy on relaxed and strained growth of III-Vy IV1-y II compound alloys using molecular-beam epitaxy
Journal article2000, Journal of Applied Physics, (87) 1, p.564-571Publication Effect of strain on mid-IR and LWIR lasers and detectors
Oral presentation1996, International Conference on Semiconductor Materials and Technology; December 16-21, 1996; Delhi, India.Publication Growth and characterisation of mid-IR InAs0.9Sb0.1/InAs strained multiple quantum well light emitting diodes grown on InAs substrates
Journal article1997, IEE Proceedings - Optoelectronics, (144) 5, p.295-298Publication Growth and characterization of AlAsySb1-y and InAsSb1-y thin films on GaAs and InAs substrates
Journal article1998, Thin Solid Films, (317) 1_2, p.52-54Publication Growth and characterization of bulk AlAsSb and InAsSb on GaAs and InAs substrates
Oral presentation1996, 10th International Conference on Thin Films and 5th European Vacuum Conference; September 23-27, 1996; Salamanca, Spain.Publication Growth and characterization of InAsySb1-y based far-infrared diodes lattice-mismatched grown on InAs substrates
Proceedings paper1996, Proceedings 3rd Bratislava Days on MBE; May 16-17, 1996. Bratislava, Slovak Republic., p.57-60Publication Growth and characterization of mid-infrared InAsSb/InAs strained multiple quantum well light-emitting diodes grown on InAs substrates
Oral presentation1996, Mid-infrared Optoelectronics, Materials and Devices; September 17-18, 1996; Lancaster, U.K.Publication Growth and characterization of mid-infrared InGaAs/InAlAs strained triple quantum-well light-emitting diodes grown on lattice-mismatched GaAs substrates
Journal article1996, Journal of Applied Physics, (80) 7, p.4177-4181Publication InAs/(GaIn)Sb superlattices for mid-IR optoelectronics: strain optimization by controlled interface formation
Journal article1998, Physica E: Low-Dimensional Systems & Nanostructures, 2, p.320-324Publication Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor Ga1-xMnxAs
;Van Esch, Ann ;Van Bockstal, L.; ;Verbanck, G. ;van Steenbergen, A. S.Wellmann, P. J.Journal article1997, Physical Review B, (56) 20, p.13103-13112Publication Micromachined poly-SiGe bolometer arrays for infrared imaging and spectroscopy
; ;Perova, Natalia A.; ; ;Goessens, ClausGrietens, BobProceedings paper2003, MEMS/MOEMS: Advances in Photonics Communications, Sensing, Metrology, Packaging and Assembly, 28/10/2002, p.54-63Publication Mid-infra-red In GaAs light-emitting diodes for optical gas sensing grown on lattice-mismatched substrates
Journal article1995, Electronics Letters, (31) 6, p.502-3Publication Mid-infrared LEDs using InAs(0.71)Sb(0.29)/InAs(0.25)In(0.75)As/inAs strained layer superlatticed active layers
Proceedings paper1998, ASDAM '98, Conference Proceedings 2nd International Conference on Advanced Semiconductor Devices and Microsystems, 5/10/1998, p.287-290Publication Molecular beam epitaxial growth of AlAsySb1-y on InAs substrates
Proceedings paper1996, Proceedings 3rd Bratislava Days on MBE; May 16-17, 1996; Bratislava, Slovak Republic., p.61-64Publication Molecular beam epitaxial growth of bulk AlAs0.16Sb0.84 and AlAs0.16Sb0.84/InAs superlattices on lattice-matched InAs substrates
Journal article1997, Japanese J. of Appl. Phys. Part 1, (36) 6A, p.3426-3428