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Browsing by Author "Harrison, I."

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    Accelerated aging of InGaN/GaN LED by electrical stressing

    Jacobs, Koen
    ;
    Cheyns, Jan
    ;
    Van der Stricht, Wim
    ;
    Moerman, Ingrid  
    ;
    Harrison, I.
    Meeting abstract
    1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.120
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    Interpretation of temperature-dependent transport properties of GaN/sapphire films grown by MBE and LP-MOCVD

    Harris, J. J.
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    Lee, K. J.
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    Harrison, I.
    ;
    Flannery, L. B.
    ;
    Korakakis, D.
    ;
    Cheng, T.
    ;
    Foxon, C. T.
    Meeting abstract
    1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.126
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    Interpretation of the temperature-dependent transport properties of GaN/Sapphire films grown by MBE and MOCVD

    Harris, J. J.
    ;
    Lee, K. J.
    ;
    Harrison, I.
    ;
    Flannery, L. B.
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    Korakakis, D.
    ;
    Cheng, T. S.
    ;
    Foxon, C. T.
    Journal article
    1999, Physica Status Solidi A, (176) 1, p.363-367
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    Investigation into the transport properties of MBE grown GaN

    Ansell, B. J.
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    Harrison, I.
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    Foxon, C. T.
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    Cheng, T. S.
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    Harris, J. J.
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    Mavroidis, C.
    ;
    Bougrioua, Zahia
    Oral presentation
    2000, 4th European GaN Workshop - EGW-4
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    Multiple parallel conduction paths observed in depth-profiled N-GaN epilayers

    Mavroidis, C.
    ;
    Harris, J. J.
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    Jackman, R. B.
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    Harrison, I.
    ;
    Ansell, B. J.
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    Bougrioua, Zahia
    Journal article
    2002, Journal of Applied Physics, (91) 12, p.9835-9840
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    Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers

    Mavroidis, C.
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    Harris, J. J.
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    Lee, K.
    ;
    Harrison, I.
    ;
    Ansell, B. J.
    ;
    Bougrioua, Zahia
    ;
    Moerman, Ingrid  
    Journal article
    2001, Physica Status Solidi B, (228) 2, p.579-583

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