Browsing by Author "Harrison, I."
Now showing 1 - 6 of 6
- Results Per Page
- Sort Options
Publication Accelerated aging of InGaN/GaN LED by electrical stressing
Meeting abstract1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.120Publication Interpretation of temperature-dependent transport properties of GaN/sapphire films grown by MBE and LP-MOCVD
;Harris, J. J. ;Lee, K. J. ;Harrison, I. ;Flannery, L. B. ;Korakakis, D. ;Cheng, T.Foxon, C. T.Meeting abstract1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.126Publication Interpretation of the temperature-dependent transport properties of GaN/Sapphire films grown by MBE and MOCVD
;Harris, J. J. ;Lee, K. J. ;Harrison, I. ;Flannery, L. B. ;Korakakis, D. ;Cheng, T. S.Foxon, C. T.Journal article1999, Physica Status Solidi A, (176) 1, p.363-367Publication Investigation into the transport properties of MBE grown GaN
;Ansell, B. J. ;Harrison, I. ;Foxon, C. T. ;Cheng, T. S. ;Harris, J. J. ;Mavroidis, C.Bougrioua, ZahiaOral presentation2000, 4th European GaN Workshop - EGW-4Publication Multiple parallel conduction paths observed in depth-profiled N-GaN epilayers
;Mavroidis, C. ;Harris, J. J. ;Jackman, R. B. ;Harrison, I. ;Ansell, B. J.Bougrioua, ZahiaJournal article2002, Journal of Applied Physics, (91) 12, p.9835-9840Publication Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers
;Mavroidis, C. ;Harris, J. J. ;Lee, K. ;Harrison, I. ;Ansell, B. J. ;Bougrioua, ZahiaJournal article2001, Physica Status Solidi B, (228) 2, p.579-583