Browsing by Author "Hendriks, Marton"
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Publication A high performance of 0.18μm CMOS technology designed for manufacturability
Proceedings paper1997, ESSDERC '97: Proceedings of the 27th European Solid-State Device Research Conference, 22/09/1997, p.404-407Publication A new HF vapor native oxide removal process for cluster applications
Proceedings paper1998, Proceedings of the Symposium on Contamination Free Manufacturing for Semiconductor Manufacturing; SEMICON West, 13/07/1998, p.J1-J10Publication Accurate determination of channel length, series resistance and junction doping profile for MOSFET optimisation in deep submicron technologies
Proceedings paper1996, Symposium on VLSI Technology, 11/06/1996, p.166-167Publication Accurate modeling of double barrier resonant tunneling diodes
Proceedings paper1995, 25th European Solid State Device Research Conference - ESSDERC, 25/09/1995, p.715-718Publication Accurate modelling of the accumulation region of a double barrier resonant tunnelling diode
Journal article1996, Solid-State Electronics, 39, p.703-712Publication Halo doping for good performance and reliability in 0.25μm CMOS technology
Proceedings paper1996, Proceedings of the 26th European Solid-State Device Research Conference - ESSDERC, 9/09/1996, p.515-518Publication Modelling of the accumulation region of a double-barrier resonant tunneling diode
Proceedings paper1994, PHANTOMS Strategic Domain Meetings (PHASDOM) Workshop, 3/10/1994Publication Practical accuracy analysis of some existing effective channel length and series resistance extraction methods for MOSFET's
Journal article1998, IEEE Trans. Electron Devices, (45) 6, p.1310-1316