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Browsing by Author "Heuken, M."

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    Effects of electron-phonon interaction and chemical shift on near-band-edge recombination in GaN

    Germain, Marianne
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    Kartheuser, E.
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    Gurskii, A. L.
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    Lutsenko, E. V.
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    Marko, I. P.
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    Pavlovskii, V. N.
    Journal article
    2002, Journal of Applied Physics, (91) 12, p.9827-9834
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    Propelling Widespread GaN Electronics Adoption With Large Diameter and CMOS Fab-Friendly GaN-on-QST® Manufacturing Platform

    Odnoblyudov, V.
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    Basceri, C.
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    Kurth, C.
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    Yamada, M.
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    Konishi, S.
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    Kawahara, M.
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    Liao, C. -C.
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    Shen, S.
    Proceedings paper
    2024, IEEE International Electron Devices Meeting (IEDM), 2024-12-07
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    Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic appliation

    Nguyen, Duy
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    Wang, Gang
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    Brammertz, Guy  
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    Leys, Maarten
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    Waldron, Niamh  
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    Winderickx, Gillis  
    Proceedings paper
    2010-10, SiGe, Ge, and Related Compounds 4: Materials, Processing and Devices, 11/10/2010, p.933-939
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    Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications

    Nguyen, Duy
    ;
    Wang, Gang
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    Waldron, Niamh  
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    Winderickx, Gillis  
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    Brammertz, Guy  
    ;
    Leys, Maarten
    Meeting abstract
    2010-10, 218th Electrochemical Society Meeting: SiGe, Ge & Related Compounds: Materials, Processing, and Devices Symposium, 10/10/2010, p.1952

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