Browsing by Author "Hirao, T."
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Publication A study on radiation damage of IGBTs 2-MeV electrons at different temperatures
Proceedings paper2004, Proceedings 7th European Conference on Radiation and its Effects on Components and Systems, 15/09/2003, p.433-437Publication A study on radiation damage of IGBTs by 2-MeV electrons at different irradiation temperatures
Oral presentation2003, 7th European Conference on Radiation and Its Effects on Components and Systems - RADECSPublication A study on radiation damage of IGBTs by 2-MeV electrons at different irradiation temperatures
Journal article2004, Nuclear Instruments & Methods in Physics Research B, 219-220, p.676-679Publication Effects of electron irradiation on IGBT devices
;Ohyama, H. ;Takakura, K. ;Nakabayashi, M. ;Hirao, T. ;Onoda, S. ;Kamiya, T.; Claeys, CorOral presentation2003, 16th International Conference on Ion Beam Analysis - IBAPublication Effects of high-temperature gamma ray irradiation on npn Si transistors
Oral presentation2001, RADECS; 10-14 September 2001; Grenoble, France.Publication High temperature electron irradiation effects in InGaAs photodiodes
Proceedings paper2004, Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003, 21/09/2003, p.381-386Publication High temperature electron irradiation effects in InGaAs photodiodes
Oral presentation2003, Gettering and Defect Engineering in Semiconductor Technology - GADESTPublication Impact of lattice defects on the performance degradation of Si photodiodes by high-temperature gamma and electron irradiation
Journal article2001, Physica B, 308, p.1226-1229Publication Induced lattice defects in InGaAsP laser diodes by high-temperature gamma ray irradiation
Journal article2001, Physica B, 308, p.1185-1188Publication Radiation damage in npn Si transistors due to high-temperature gamma-ray and 1-MeV electron irradiation
Proceedings paper2002, GADEST 2001 - Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology;, p.465-470Publication Radiation damage of InGaAsP laser diodes by high-temperature gamma ray and electron irradiation
Proceedings paper2001, Proceedings of the 31st European Solid-State Device Research Conference, 11/09/2001, p.325-354Publication Radiation damages of polycrystalline silicon films and NPN Si transistors by high-energy particle irradiation
Journal article2001, Microelectronics Reliability, (41) 9_10, p.1443-1448Publication Radiation damages of polycrystalline silicon films and NPN Si transistors by high-energy particle irradiation
Oral presentation2001, Proceedings of the 12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF;Publication Study of electron-irradiated IGBTs by the DCIV method and lifetime
Proceedings paper2004, Proceedings International Conference on Electrical Engineering, p.632-635Publication The degradation of the electrical properties of IGBTS by 2-MeV electron irradiation and high-temperature
Proceedings paper2004, Proceedings International Workshop on Radiation Effects in Semiconductor Devices for Space Applications, p.183-186