Browsing by Author "Humphreys, C. J."

Now showing 1 - 5 of 5

Characterisation of epitaxial laterally overgrown Gallium Nitride using transmission electron microscopy

Tricker, D. M.
;
Jacobs, Koen
;
Humphreys, C. J.
Journal article
1999, Physica Status Solidi B, (216) 1, p.633-637
Chemical mapping of V-defects in InGaN MQWs

Sharma, N.
;
Tricker, D. M.
;
Thomas, P. J.
;
Humphreys, C. J.
;
Bougrioua, Zahia
;
Jacobs, Koen
Oral presentation
2000, 4th European GaN Workshop - EGW-4
GaN based device structures grown in a close coupled showerhead MOCVD reactor

Thrush, E. J.
;
Kappers, M. J.
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Bougrioua, Zahia
;
Davies, R. A.
;
Wallis, R. H.
;
Phillips, W. A.
Oral presentation
2001, National Chinese MOCVD Conferenc; October 2001;
Microstructural aspects of the early stages of GaN growth by MOCVD

Ramloll, C. S.
;
Barnard, J. S.
;
Bougrioua, Zahia
;
Humphreys, C. J.
Oral presentation
2001, Electron Microscopy and Analysis Group conference - EMAG; 5-7 September 2001; Dundee, United Kingdom.
Structural features in GaN grown on a Ge-(111) substrate

Zhang, Yucheng
;
McAleese, C.
;
Xiu, H.
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Humphreys, C. J.
;
Lieten, Ruben
;
Degroote, Stefan
Journal article
2008, Physica Status Solidi C, (5) 6, p.1802-1804