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Browsing by Author "Lansbergen, G."

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    Atomistic understanding of a single gated dopant atom in a MOSFET

    Lansbergen, G.
    ;
    Rahman, R.
    ;
    Wellard, C.
    ;
    Caro, J.
    ;
    Collaert, Nadine  
    ;
    Biesemans, Serge  
    ;
    Klimeck, G.
    Proceedings paper
    2008, Materials and Devices for "Beyond CMOS" Scaling, 24/03/2008, p.1067-B03-07
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    Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

    Rahman, R.
    ;
    Lansbergen, G.
    ;
    Verduijn, J.
    ;
    Tettamanzi, G.C.
    ;
    Park, S.H.
    ;
    Collaert, Nadine  
    Journal article
    2011, Physical Review B, (84) 11, p.115428
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    Electron transport properties of single donors in nanoscale Si MOSFETs

    Verduijn, J.
    ;
    Lansbergen, G.
    ;
    Tettamanzi, G.C.
    ;
    Rahman, R.
    ;
    Biesemans, Serge  
    ;
    Collaert, Nadine  
    Proceedings paper
    2009, Silicon Nanoelectronics Workshop, 13/06/2009, p.135-136

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