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Browsing by Author "Lee, I."

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    Epitaxial growth of up to 120x {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications

    Loo, Roger  
    ;
    Beggiato, Matteo  
    ;
    Shimura, Yosuke  
    ;
    Rassoul, Nouredine  
    ;
    Vanherle, Wendy  
    Journal article
    2025, JOURNAL OF APPLIED PHYSICS, (138) 5, p.055702

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