Browsing by Author "Leonelli, Daniele"

A 35nm diameter vertical silicon nanowire short-gate tunnelFET

Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction tunnel-FETs

Boosting the on-current of Si-based tunnel field-effect transistors

Boosting the on-current of Si-based tunnel field-effect transistors

Design, fabrication and characterization of tunnel field effect transistors for ultra-low power CMOS

Drain voltage dependent analytical model of tunnel field-effect transistors

Drive current enhancement in p-tunnel FETs by optimization of the process conditions

Drive current improvement in Si tunnel field effect transistors by means of silicide engineering

Electrical results of vertical Si N-tunnel FETs

Experimental analog performance of pTFETs as a function of temperature

Exploration of Scandium Doping in Sb2Te3 for Phase Change Memory Application

Fabrication and analysis of a Si/Si0.55Ge0.45 hetero-junction line tunnel FET

Fabrication and characterization of Si and hetero-junction tunnel field effect transistors

Ge and III/V devices on Si for advanced CMOS

Hetero Ge/SI and Si1-xGex/Si nanowires for vertical microelectronics devices

High mobility channel materials and novel devices for scaling of nanoelectronics beyond the Si roadmap

Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs

Modeling the single-gate, double-gate and gate-all-around tunnel field-effect transistor

Multiple-gate tunneling field effect transistors with sub-60mV/dec subthreshold slope

Novel architecture to boost the vertical tunneling in tunnel field effect transistors