Browsing by Author "Litovchenko, V.G."

Now showing 1 - 3 of 3

Effect of grown-in defects on the structure of oxygen precipitates in Cz-Si crystals with different diameter

Litovchenko, V.G.
;
Lisovskyy, I.P.
;
Claeys, Cor
;
Kladko, V.P.
;
Zlobin, S.O.
;
Muravska, M.V.
Proceedings paper
2008, Gettering and Defect Engineering in Semiconductor Technology XII, 14/10/2007, p.405-412
Influence of gamma-radiation on short channel SOI-MOSFETs with thin SiO2 films

Claeys, Cor
;
Simoen, Eddy
;
Litovchenko, V.G.
;
Evtukh, A.
;
Efremov, A.
;
Kizjak, A.
;
Rassamakin, J.
Proceedings paper
2002, Progress in SOI Structures and Devices Operating at Extreme Conditions. Proceedings of the NATO Advanced Research Workshop, 15/10/2000, p.211-220
Radiation induced transformation of impurity centers in the gate oxide of short channel SOI MOSFETs

Evtukh, A.
;
Kizjak, A.
;
Litovchenko, V.G.
;
Claeys, Cor
;
Simoen, Eddy
Proceedings paper
2005, Gettering and Defect Engineering in Semiconductor Technology XI. Proceedings of the 11th International Autumn Meeting, 25/09/2005, p.469-476