Browsing by Author "Mazure, C."

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200 mm Germanium-on-insulator(GeOI) by smart cut technology and recent GeOI MOSFETs achievements

Akatsu, T.
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Deguet, C.
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Sanchez, L.
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Richtarch, C.
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Allibert, F.
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Letertre, F.
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Mazure, C.
Proceedings paper
2005, Proceedings of the IEEE International SOI Conference, 3/10/2005, p.137-138
A novel low-voltage biasing scheme for double gate FBC achieving 5s retention and 10^16 endurance at 85°C

Lu, Zhichao
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Collaert, Nadine
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Aoulaiche, Marc
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De Wachter, Bart
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De Keersgieter, An
Proceedings paper
2010, IEEE International Elecrton Devices Meeting - IEDM, 6/12/2010, p.288-291