Browsing by Author "Mijlemans, P."
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Publication 4-mW microcavity LED at 650 nm on germanium substrates
Proceedings paper2000, Light-emitting diodes: Research, Manufacturing, and Applications IV, 26/01/2000, p.196-204Publication 5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates
Journal article2001, Electronics Letters, (37) 6, p.377-378Publication Accelerated ageing tests on metamorphic HEMTs on germanium
Oral presentation2001, Heterostructure Technology Workshop; 28-30 October 2001; Padova, Italy.Publication Accurate microwave large-signal model for thinned metamorphic HEMTs on germanium, aimed for low-power non-linear MCM-D circuit applications
Proceedings paper2001, GAAS - European Gallium Arsenide and other Semiconductors Application Symposium, 24/09/2001Publication (Al)GaInP multiquantum well LEDs on GaAs and Ge
Journal article2000, Journal of Electronic Materials, (29) 1, p.80-85Publication (Al)GaInP multiquantum well LEDs on Ge and GaAs
Oral presentation1999, 9th Biennial Workshop on Organometallic Phase EpitaxyPublication AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates
Journal article2000, IEEE Photonics Technology Letters, (12) 8, p.957-959Publication Comparative study on the performance of InAs/Al0.2Ga0.8Sb quantum well Hall sensors on germanium and GaAs substrates
Journal article2000, Sensors and Actuators A, (79) 3, p.175-175Publication Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line
Proceedings paper2004, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.189-192Publication Germanium - The all-purpose substrate of the future
Journal article1998, Compound Semiconductor, (4) 6, p.30-31Publication Germanium as a growth substrate for high quality AlGaAs/InGaAs laser diodes
Proceedings paper1998, Proceedings 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, 16/11/1998, p.9-12Publication Germanium deep-sub micron PMOS transistors with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm prototyping line
Proceedings paper2004, SiGe: Materials, Processing, and Devices. Proceedings of the 1st International Sympsoium, 3/10/2004, p.693-700Publication Grown-in lattice defects and diffusion in czochralski-grown germanium
Journal article2004, Defect and Diffusion Forum, 230-232, p.149-176Publication High efficiency InAlGaP microcavity LEDs on Ge-substrates
Proceedings paper2000, Proceedings Symposium IEEE/LEOS Benelux Chapter, 30/10/2000, p.59-62Publication High quality AlGaInP layers on GaAs and Ge grown by MOVPE
Proceedings paper1999, Proceedings of the 8th European Workshop on MOVPE, 8/06/1999, p.139-142Publication High quality InGaAs/AlGaAs lasers grown on Ge substrates
Journal article1998, Journal of Crystal Growth, (195) 1_4, p.655-659Publication High-efficiency 650 nm thin-film light-emitting diodes
Proceedings paper2001, Light-Emitting Diodes: Research , Manufacturing, and Applications V; 21-26 January 2001; San Jose, CA, USA., p.36-40Publication High-efficiency thin-film light-emitting diodes at 650nm
Journal article2001, Electronics Letters, (37) 13, p.852-853Publication High-performance InAs quantum well Hall sensors on germanium substrates
Journal article1998, Electronics Letters, (34) 23, p.2273-2274Publication InAlGaP materials and red emitting LEDs on GaAs and Ge substrates
Oral presentation2001, 9th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques