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Browsing by Author "Mijlemans, P."

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    4-mW microcavity LED at 650 nm on germanium substrates

    D'Hondt, Mark
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    Modak, Prasanta
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    Delbeke, Danaë
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    Moerman, Ingrid  
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    Van Daele, Peter  
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    Baets, Roel  
    Proceedings paper
    2000, Light-emitting diodes: Research, Manufacturing, and Applications IV, 26/01/2000, p.196-204
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    5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates

    Modak, Prasanta
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    D'Hondt, Mark
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    Moerman, Ingrid  
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    Van Daele, Peter  
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    Mijlemans, P.
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    Demeester, Piet  
    Journal article
    2001, Electronics Letters, (37) 6, p.377-378
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    Accelerated ageing tests on metamorphic HEMTs on germanium

    Vandersmissen, Raf
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    Petersen, Rainer
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    Schreurs, Dominique  
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    Mijlemans, P.
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    Borghs, Gustaaf  
    Oral presentation
    2001, Heterostructure Technology Workshop; 28-30 October 2001; Padova, Italy.
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    Accurate microwave large-signal model for thinned metamorphic HEMTs on germanium, aimed for low-power non-linear MCM-D circuit applications

    Schreurs, Dominique  
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    Vandersmissen, Raf
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    Mijlemans, P.
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    Borghs, Gustaaf  
    Proceedings paper
    2001, GAAS - European Gallium Arsenide and other Semiconductors Application Symposium, 24/09/2001
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    (Al)GaInP multiquantum well LEDs on GaAs and Ge

    Modak, Prasanta
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    D'Hondt, Mark
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    Mijlemans, P.
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    Moerman, Ingrid  
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    Van Daele, Peter  
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    Demeester, Piet  
    Journal article
    2000, Journal of Electronic Materials, (29) 1, p.80-85
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    (Al)GaInP multiquantum well LEDs on Ge and GaAs

    Modak, Prasanta
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    D'Hondt, Mark
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    Moerman, Ingrid  
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    Van Daele, Peter  
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    Demeester, Piet  
    Oral presentation
    1999, 9th Biennial Workshop on Organometallic Phase Epitaxy
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    AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates

    Modak, Prasanta
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    D'Hondt, Mark
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    Delbeke, Danaë
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    Moerman, Ingrid  
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    Van Daele, Peter  
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    Baets, Roel  
    Journal article
    2000, IEEE Photonics Technology Letters, (12) 8, p.957-959
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    Comparative study on the performance of InAs/Al0.2Ga0.8Sb quantum well Hall sensors on germanium and GaAs substrates

    Behet, Markus
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    De Boeck, Jo  
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    Borghs, Gustaaf  
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    Mijlemans, P.
    Journal article
    2000, Sensors and Actuators A, (79) 3, p.175-175
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    Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line

    De Jaeger, Brice  
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    Houssa, Michel  
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    Satta, Alessandra
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    Kubicek, Stefan  
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    Verheyen, Peter  
    Proceedings paper
    2004, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.189-192
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    Germanium - The all-purpose substrate of the future

    D'Hondt, Mark
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    Mijlemans, P.
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    Moerman, Ingrid  
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    Demeester, Piet  
    Journal article
    1998, Compound Semiconductor, (4) 6, p.30-31
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    Germanium as a growth substrate for high quality AlGaAs/InGaAs laser diodes

    D'Hondt, Mark
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    Derluyn, Joff
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    Moerman, Ingrid  
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    Verstuyft, Steven  
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    Van Daele, Peter  
    Proceedings paper
    1998, Proceedings 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, 16/11/1998, p.9-12
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    Germanium deep-sub micron PMOS transistors with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm prototyping line

    Meuris, Marc  
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    De Jaeger, Brice  
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    Kubicek, Stefan  
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    Verheyen, Peter  
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    Van Steenbergen, Jan  
    Proceedings paper
    2004, SiGe: Materials, Processing, and Devices. Proceedings of the 1st International Sympsoium, 3/10/2004, p.693-700
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    Grown-in lattice defects and diffusion in czochralski-grown germanium

    Vanhellemont, J.
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    De Gryse, O.
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    Hens, S.
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    Vanmeerbeek, P.
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    Poelman, D.
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    Clauws, P.
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    Simoen, Eddy  
    Journal article
    2004, Defect and Diffusion Forum, 230-232, p.149-176
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    High efficiency InAlGaP microcavity LEDs on Ge-substrates

    Modak, Prasanta
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    D'Hondt, Mark
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    Delbeke, Danaë
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    Moerman, Ingrid  
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    Van Daele, Peter  
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    Baets, Roel  
    Proceedings paper
    2000, Proceedings Symposium IEEE/LEOS Benelux Chapter, 30/10/2000, p.59-62
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    High quality AlGaInP layers on GaAs and Ge grown by MOVPE

    Modak, Prasanta
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    Derluyn, Joff
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    D'Hondt, Mark
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    Mijlemans, P.
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    Moerman, Ingrid  
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    Demeester, Piet  
    Proceedings paper
    1999, Proceedings of the 8th European Workshop on MOVPE, 8/06/1999, p.139-142
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    High quality InGaAs/AlGaAs lasers grown on Ge substrates

    D'Hondt, Mark
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    Yu, Zong-Qiang
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    Depreter, Bart
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    Sys, Carl
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    Moerman, Ingrid  
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    Demeester, Piet  
    Journal article
    1998, Journal of Crystal Growth, (195) 1_4, p.655-659
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    High-efficiency 650 nm thin-film light-emitting diodes

    Rooman, Cathleen
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    Windisch, Reiner
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    D'Hondt, Mark
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    Modak, Prasanta
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    Moerman, Ingrid  
    Proceedings paper
    2001, Light-Emitting Diodes: Research , Manufacturing, and Applications V; 21-26 January 2001; San Jose, CA, USA., p.36-40
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    High-efficiency thin-film light-emitting diodes at 650nm

    Rooman, Cathleen
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    Windisch, Reiner
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    D'Hondt, Mark
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    Dutta, Barundeb  
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    Modak, Prasanta
    Journal article
    2001, Electronics Letters, (37) 13, p.852-853
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    High-performance InAs quantum well Hall sensors on germanium substrates

    Behet, Markus
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    De Boeck, Jo  
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    Borghs, Gustaaf  
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    Mijlemans, P.
    Journal article
    1998, Electronics Letters, (34) 23, p.2273-2274
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    InAlGaP materials and red emitting LEDs on GaAs and Ge substrates

    Modak, Prasanta
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    D'Hondt, Mark
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    Moerman, Ingrid  
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    Van Daele, Peter  
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    Mijlemans, P.
    ;
    Demeester, Piet  
    Oral presentation
    2001, 9th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques
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