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Browsing by Author "Molle, A."

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    Active trap determination at the interface of Ge and In0.53Ga0.47As substrates with dielectric layers

    Molle, A.
    ;
    Baldovino, S.
    ;
    Lamagna, L.
    ;
    Spiga, S.
    ;
    Lamperti, A.
    ;
    Fanciulli, M.
    ;
    Tsoutsou, D.
    Proceedings paper
    2011, Physics and Technology of High-k Materials 9, 9/10/2011, p.203-221
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    Ge-based interface passivation for atomic layer deposited La-doped ZrO2

    Molle, A.
    ;
    Brammertz, Guy  
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    Lamagna, L.
    ;
    Fanciulli, M.
    ;
    Meuris, Marc  
    ;
    Spiga, S.
    Journal article
    2009, Applied Physics Letters, (95) 2, p.23507
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    Ge-based passivation for high permittivity oxide deposition on III-V compounds substrates

    Molle, A.
    ;
    Spiga, S.
    ;
    Lamagna, L.
    ;
    Fanciulli, M.
    ;
    Brammertz, Guy  
    ;
    Meuris, Marc  
    Meeting abstract
    2009, Abstracts 6th International Conference on Silicon Epitaxy and Heterostructures - ICSI-6, 17/05/2009, p.158
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    Impact of CVD chemistry on band alignment at the MoS2/SiO2 interface

    Tummala, P. P.
    ;
    Delie, Gilles  
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    Cataldo, A.
    ;
    Ghomi, S.
    ;
    Martella, C.
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    Ferrini, G.
    ;
    Molle, A.
    Journal article
    2023, SOLID-STATE ELECTRONICS, 209, p.Art. 108782
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    Transitivity of band offsets between semiconductor heterojunctions and oxide insulators

    Afanas'ev, V. V.
    ;
    Chou, H.-Y.
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    Houssa, M.
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    Lamagna, L.
    ;
    Lamperti, A.
    ;
    Molle, A.
    ;
    Vincent, Benjamin  
    Journal article
    2011, Applied Physics Letters, (99) 17, p.172101

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