Browsing by Author "Neimash, V."
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Publication A deep level study of high-temperature electron-irradiated n-type Cz silicon
; Publication A deep level study of high-temperature electron-irradiated n-type Cz silicon
; Publication Behavior of n-Si electrical parameters after a high-temperature 1 MeV electron irradiation
Oral presentation2002, 2nd International Conference on Materials and Coatings for Extreme PerformancesPublication Deep levels in high-temperature 1 MeV electron irradiated n-type czochralski silicon
; Publication DLTS studies of high-temperature electron irradiated Cz n-Si
Journal article2004, Physica Status Solidi A, (201) 3, p.509-516Publication Electrically active defects in irradiated n-Type Czochralski silicon doped with group IV impurities
Oral presentation2004, Workshop on Defects Relevant to Engineering Advanced Silicon-Based DevicesPublication Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities
Journal article2005, Journal of Physics: Condensed Matter, (17) 22, p.S2255-S2266Publication High-temperature electron irradiation effects on the electrical parameters of n-type Cz silicon
; Claeys, CorMeeting abstract2002, Belgische Natuurkundige Vereniging / Société Belge de Physique: General Scientific Meeting, 5/06/2002, p.CM1-6Publication High-temperature electron-irradiation induced deep levels in n-type Cz silicon
; Publication Impact of high-temperature electron irradiation on the electrical parameters of n-type CZ silicon
; Claeys, CorProceedings paper2002, High Purity Silicon VII, 20/10/2002, p.336-346Publication On the effect of lead on irradiation induced defects in silicon
Proceedings paper2005, Gettering and Defect Engineering in Semiconductor Technology XI. Proceedings of the 11th International Autumn Meeting, 25/09/2005, p.373-378Publication Radiation-induced deep levels in lead and tin doped n-type czochralski silicon
Proceedings paper2004, High Purity Silicon VIII, 3/10/2004, p.395-406