Browsing by Author "Newcomb, S.B."
Now showing 1 - 4 of 4
- Results per page
- Sort Options
Publication Band offsets at interfaces of (100)InxGa1-xAs (0
Journal article2009, Microelectronic Engineering, (86) 7_9, p.1550-1553Publication Capacitance-voltage and conductance analysis of high-k/InxGa1-xAs structures (x = 0, 0.15, 0.3, and 0.53)
;Hurley, P.K. ;O'Connor, E. ;Monaghan, S. ;Long, R.D. ;O'Mahony, A. ;Povey, I.M.Cherkaoui, K.Meeting abstract2009, 216th ECS Meeting, 4/10/2009, p.2115Publication Energy barriers at interfaces between (100) InxGa1-xAs(0<=x<=0.53) and atomic layer deposited Al2O3 and HfO2
Journal article2009, Applied Physics Letters, (94) 20, p.202110Publication Structural and electrical properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)
;Hurley, P.K. ;O'Connor, E. ;Monaghan, S. ;Long, R.D. ;O'Mahony, A. ;Povey, I.M.Cherkaoui, K.Proceedings paper2009, High Dielectric Constant Materials and Gate Stacks 7, 4/10/2009, p.113-127