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Browsing by Author "Neyts, Erik"

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    A density functional theory simulation of the formation of Ni-doped fullerenes by ion

    Neyts, Erik
    ;
    Maeyens, Axel
    ;
    Pourtois, Geoffrey  
    ;
    Bogaerts, Annemie
    Journal article
    2011, Carbon, (49) 3, p.1013-1017
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    Atomic layer etching of amorphous Si on MoS2 for selectively patterned MX2 heterostructures

    Heyne, Markus
    ;
    Goodyear, Andy
    ;
    de Marneffe, Jean-Francois  
    ;
    Cooke, Mike
    ;
    Neyts, Erik
    ;
    Radu, Iuliana  
    Proceedings paper
    2017, iPlasmaNano-VIII, 2/07/2017
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    Characterization of nano-crystalline diamond films grown under continuous DC bias during plasma enhanced chemical vapor deposition

    Mortet, Vincent
    ;
    Zhang, Liang
    ;
    Echert, Maxie
    ;
    Soltani, Ali
    ;
    D'Haen, Jan  
    ;
    Douheret, Olivier
    Proceedings paper
    2010, Diamond Electronics and Bioelectronics - Fundamentals to Applications III, 30/11/2009, p.1203-J05-03
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    Hyperthermal oxidation of Si(100)2x1 surfaces: effect of growth temperature

    Khalilov, Umedjon
    ;
    Pourtois, Geoffrey  
    ;
    van Duin, Adry
    ;
    Neyts, Erik
    Journal article
    2012, Journal of Physical Chemistry C, (116) 15, p.8649-8656
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    Hyperthermal oxygen interacting with silicon surfaces : adsorption, implantation, and damage creation

    Neyts, Erik
    ;
    Khalilov, Umedjon
    ;
    Pourtois, Geoffrey  
    ;
    van Duin, Adri
    Journal article
    2011, Journal of Physical Chemistry C, (115) 15, p.48418-4823
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    Stability of Si epoxide defects in Si nanowires: a mixed reactive force field/DFT study

    Schoeters, Bob
    ;
    Neyts, Erik
    ;
    Khalilov, Umedjon
    ;
    Pourtois, Geoffrey  
    ;
    Partoens, Bob
    Journal article
    2013, Physical Chemistry Chemical Physics, (15) 36, p.15091-15097
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    Uniform-acceptance force-bias Monte Carlo method with time scale to study solid-state diffusion

    Mees, Maarten  
    ;
    Pourtois, Geoffrey  
    ;
    Neyts, Erik
    ;
    Thijsse, Barend
    ;
    Stesmans, Andre  
    Journal article
    2012, Physical Review B, (85) 13, p.134301

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