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Browsing by Author "Ogawa, Masaki"

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    Defect control for Ge/Si and Ge1-xSnx/Ge/Si heterostructures

    Sakai, Akira
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    Takeuchi, Shotaro
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    Nakatsuka, Osamu
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    Ogawa, Masaki
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    Zaima, Shigeaki
    Meeting abstract
    2007, 5th International Symposium on Control of Semiconductor Interfaces - ISCSI-V, 12/11/2007, p.31-32
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    Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

    Takeuchi, Shotaro
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    Shimura, Yosuke
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    Nakatsuka, Osamu
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    Zaima, Shigeaki
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    Ogawa, Masaki
    Journal article
    2008, Applied Physics Letters, (92) 23, p.231916
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    Interface and defect control for group IV channel engineering

    Sakai, Akira
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    Ohara, Yuji
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    Ueda, Takaya
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    Toyoda, Eiji
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    Izunome, Koji
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    Takeuchi, Shotaro
    Proceedings paper
    2008, SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices, 12/10/2008, p.687-698
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    Interface and defect control for group IV channel engineering

    Sakai, Akira
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    Ohara, Yuji
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    Ueda, Takaya
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    Toyoda, Eiji
    ;
    Izunome, Koji
    ;
    Takeuchi, Shotaro
    Meeting abstract
    2008, 214th ECS Meeting, 12/10/2008, p.2450
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    Scanning tunneling microscopy observation of initial growth of Sn and Ge1-xSnx layers on Ge(001) substrates

    Yamazaki, Masahiro
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    Takeuchi, Shotaro
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    Nakatsuka, Osamu
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    Sakai, Akira
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    Ogawa, Masaki
    Journal article
    2008, Applied Surface Science, 254, p.6048-6051
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    Tensile strained Ge layers grown on compositionally step-graded Ge1-xSnx buffer layers

    Shimura, Yosuke
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    Takeuchi, Shotaro
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    Sakai, Akira
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    Nakatsuka, Osamu
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    Ogawa, Masaki
    Proceedings paper
    2007, 3rd International Workshop on New Group IV Semiconductor Nanoelectronics, 8/11/2007, p.29-30
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    Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates

    Takeuchi, Shotaro
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    Sakai, Akira
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    Nakatsuka, Osamu
    ;
    Ogawa, Masaki
    ;
    Zaima, Shigeaki
    Journal article
    2008, Thin Solid Films, (517) 1, p.159-162

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