Browsing by Author "Ogawa, Masaki"
Now showing 1 - 7 of 7
- Results Per Page
- Sort Options
Publication Defect control for Ge/Si and Ge1-xSnx/Ge/Si heterostructures
;Sakai, Akira ;Takeuchi, Shotaro ;Nakatsuka, Osamu ;Ogawa, MasakiZaima, ShigeakiMeeting abstract2007, 5th International Symposium on Control of Semiconductor Interfaces - ISCSI-V, 12/11/2007, p.31-32Publication Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method
;Takeuchi, Shotaro ;Shimura, Yosuke ;Nakatsuka, Osamu ;Zaima, ShigeakiOgawa, MasakiJournal article2008, Applied Physics Letters, (92) 23, p.231916Publication Interface and defect control for group IV channel engineering
;Sakai, Akira ;Ohara, Yuji ;Ueda, Takaya ;Toyoda, Eiji ;Izunome, KojiTakeuchi, ShotaroProceedings paper2008, SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices, 12/10/2008, p.687-698Publication Interface and defect control for group IV channel engineering
;Sakai, Akira ;Ohara, Yuji ;Ueda, Takaya ;Toyoda, Eiji ;Izunome, KojiTakeuchi, ShotaroMeeting abstract2008, 214th ECS Meeting, 12/10/2008, p.2450Publication Scanning tunneling microscopy observation of initial growth of Sn and Ge1-xSnx layers on Ge(001) substrates
;Yamazaki, Masahiro ;Takeuchi, Shotaro ;Nakatsuka, Osamu ;Sakai, AkiraOgawa, MasakiJournal article2008, Applied Surface Science, 254, p.6048-6051Publication Tensile strained Ge layers grown on compositionally step-graded Ge1-xSnx buffer layers
;Shimura, Yosuke ;Takeuchi, Shotaro ;Sakai, Akira ;Nakatsuka, OsamuOgawa, MasakiProceedings paper2007, 3rd International Workshop on New Group IV Semiconductor Nanoelectronics, 8/11/2007, p.29-30Publication Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates
;Takeuchi, Shotaro ;Sakai, Akira ;Nakatsuka, Osamu ;Ogawa, MasakiZaima, ShigeakiJournal article2008, Thin Solid Films, (517) 1, p.159-162