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Browsing by Author "Okushima, Mototsugu"

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    A 4.5 kV HBM, 300 V CDM, 1.2 kV HMM ESD protected DC-to-16.1 GHz wideband LNA in 90 nm CMOS

    Linten, Dimitri  
    ;
    Thijs, Steven  
    ;
    Okushima, Mototsugu
    ;
    Scholz, Mirko
    ;
    Borremans, Jonathan
    Proceedings paper
    2009, 31st Annual EOS/ESD Symposium, 30/08/2009, p.5A.6
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    A DC-to-22 GHz 8.4mW compact dual-feedback wideband LNA in 90 nm digital CMOS

    Okushima, Mototsugu
    ;
    Borremans, Jonathan
    ;
    Linten, Dimitri  
    ;
    Groeseneken, Guido  
    Proceedings paper
    2009-06, Radio Frequency Integrated Circuits Symposium - RFIC, 7/06/2009, p.295-298
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    Inductor-based ESD protection under CDM-like ESD stress conditions for RF applications

    Thijs, Steven  
    ;
    Okushima, Mototsugu
    ;
    Borremans, Jonathan
    ;
    Jansen, Philippe
    ;
    Linten, Dimitri  
    Proceedings paper
    2008, IEEE Custom Integrated Circuits Conference - CICC, 21/09/2008, p.49-52

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