Browsing by Author "Omnès, F."

Now showing 1 - 5 of 5

Effect of dielectric layers on the performance of AlGaN-based UV Schottky photodiodes

Monroy, E.
;
Calle, F.
;
Pau, J. L.
;
Muñoz, E.
;
Verdú, M.
;
Sánchez, F. J.
;
Montojo, M. T.
;
Omnès, F.
Journal article
2001, Physica Status Solidi A, (188) 1, p.307-310
Hall hole mobility in boron-doped homoepitaxial diamond

Pernot, J.
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Volpe, P.N.
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Omnès, F.
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Muret, P.
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Mortet, Vincent
;
Haenen, Ken
;
Teraji, T.
Journal article
2010, Physical Review B, (81) 20, p.205203
Reliability of Schottky contacts on AlGaN

Monroy, E.
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Calle, F.
;
Palacios, T.
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Sánchez-Osorio, J.
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Verdú, M.
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Sánchez, F. J.
;
Montojo, M. T.
;
Omnès, F.
Journal article
2001, Physica Status Solidi A, (188) 1, p.367-370
Sub-micron technology in group-III nitrides: application to electronic devices

Palacios, T.
;
Calle, F.
;
Monroy, E.
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Grajal, J.
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Eickhoff, M.
;
Ambacher, O.
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Omnès, F.
;
Bougrioua, F.
Meeting abstract
2001, 11th European Heterostructure Technology Workshop, 28/10/2001, p.27-28
Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N

Monroy, E.
;
Calle, F.
;
Ranchal, R.
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Verdu, M.
;
Sanchez, F.J.
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Montojo, M.T.
;
Eickhoff, M.
;
Omnès, F.
Journal article
2002, Semiconductor Science and Technology, (17) 9, p.L47-L54