Browsing by Author "Pernot, J."

Now showing 1 - 5 of 5

Growth parameter optimisation for improved electronic and crystalline quality n-type diamond

Nicley, Shannon
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Pobedinskas, Paulius
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Rouzbahani, Rozita
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Loto, O.
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Pernot, J.
;
Haenen, Ken
Oral presentation
2017, 11th International Conference on New Diamond and Nano Carbons - NDNC
Hall hole mobility in boron-doped homoepitaxial diamond

Pernot, J.
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Volpe, P.N.
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Omnès, F.
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Muret, P.
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Mortet, Vincent
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Haenen, Ken
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Teraji, T.
Journal article
2010, Physical Review B, (81) 20, p.205203
Mobility in homoepitaxial doped diamond

Pernot, J.
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Volpe, P.N.
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Omnes, F.
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Muret, P.
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Mortet, Vincent
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Haenen, Ken
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Teraji, T.
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Koizumi, S.
Meeting abstract
2009, MRS Fall Meeting Symposium J: Diamond Electronics and Bioelectronics - Fundamentals to Applications III, 30/11/2009, p.J14.1
Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates

Mortet, Vincent
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Pernot, J.
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Jomard, F.
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Soltani, A.
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Remes, Z.
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Barjon, J.
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D'Haen, Jan
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Haenen, Ken
Journal article
2015, Diamond and Related Materials, 53, p.29-34
Why carrier mobility in diamond is larger than in Si or 4H-SiC

Pernot, J.
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Volpe, P.N.
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Gheeraert, E.
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Bustarret, E.
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Omnes, F.
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Muret, P.
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Mortet, V.
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Haenen, Ken
Oral presentation
2011, 5th International Conference on New Diamond and Nano Carbons - NDNC