Browsing by Author "Rackauskas, Ben"
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Publication Determination of the self-compensation ratio of carbon in AlGaN for HEMTs
Journal article2018, IEEE Transactions on Electron Devices, (65) 5, p.1838-1842Publication Self-compensation of carbon in AlGaN
Meeting abstract2018-08, 7th International Symposium of Growth of III-Nitrides - ISGN-7, 5/08/2018, p.Fr3.3Publication The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown
Journal article2018, IEEE Electron Device Letters, (39) 10, p.1580-1583