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Browsing by Author "Raynaud, C."

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    Influence of device engineering on the analog and RF performances of SOI MOSFETs

    Kilchytska, V.
    ;
    Nève, A.
    ;
    Vancaillie, L.
    ;
    Levacq, D.
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    Adriaensen, S.
    ;
    van Meer, Hans
    ;
    Raynaud, C.
    Journal article
    2003, IEEE Trans. Electron Devices, (50) 3, p.577-588
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    Shrinking from 0.25 μm down to 0.12 μm SOI CMOS technology node: a contribution to 1/f noise in partially depleted n-MOSFETs

    Dieudonné, F.
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    Haendler, S.
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    Jomaah, J.
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    Raynaud, C.
    ;
    De Meyer, Kristin  
    ;
    van Meer, Hans
    ;
    Balestra, F.
    Proceedings paper
    2002, Proceedings Ultimate Integration of Silicon (ULIS) Workshop, 7/03/2002, p.33-36

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