Browsing by Author "Rendell, M. J."
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Publication Holes in silicon are heavier than expected: Transport properties of extremely high mobility electrons and holes in silicon MOSFETs
;Wendoloski, J. P. ;Hillier, J. ;Liles, S. D. ;Rendell, M. J. ;Ashlea-Alava, Y. ;Raes, B.Li, R.Journal article2026, PHYSICAL REVIEW B, (113) 4, p.045302