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Browsing by Author "Resta, Giovanni"

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    Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors

    Resta, Giovanni
    ;
    Balaji, Yashwanth  
    ;
    Lin, Dennis  
    ;
    Radu, Iuliana  
    ;
    Catthoor, Francky  
    Proceedings paper
    2018, 76th Device Research Conference - DRC, 24/06/2018
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    Doping-free complementary logic gates enabled by two-dimensional polarity-controllable transistors

    Resta, Giovanni
    ;
    Balaji, Yashwanth  
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    Lin, Dennis  
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    Radu, Iuliana  
    ;
    Catthoor, Francky  
    Journal article
    2018, ACS Nano, (12) 7, p.7039-7047
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    Polarity control in WSe2 double-gate transistors

    Resta, Giovanni
    ;
    Sutar, Surajit  
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    Balaji, Yashwanth  
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    Lin, Dennis  
    ;
    Raghavan, Praveen
    Journal article
    2016, Scientific Reports, 6, p.29448
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    Polarity-controllable 2-dimensional transistors: experimental demonstration and scaling opportunities

    Resta, Giovanni
    ;
    Balaji, Yashwanth  
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    Agarwal Kumar, Tarun
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    Radu, Iuliana  
    ;
    Lin, Dennis  
    Proceedings paper
    2017, IEEE International Conference on Nanotechnology - NANO, 25/07/2017
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    Scaling trends and performance evaluation of 2-dimensional polarity-controllable FETs

    Resta, Giovanni
    ;
    Agarwal Kumar, Tarun
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    Lin, Dennis  
    ;
    Radu, Iuliana  
    ;
    Catthoor, Francky  
    Journal article
    2017, Scientific Reports, 7, p.45556
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    Towards high-performance polarity-controllable FETs with 2D materials

    Resta, Giovanni
    ;
    Gonzalez, Jorge Romero
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    Balaji, Yashwanth  
    ;
    Agarwal Kumar, Tarun
    ;
    Lin, Dennis  
    Proceedings paper
    2018, 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), 19/03/2018, p.637-641

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