Browsing by Author "Saeidi, Ali"
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Publication Experimental details of a steep-slope ferroelectric InGaAs Tunnel-FET with high-quality PZT and Modeling insights in the transient polarization
Journal article2020, IEEE Transactions on Electron Devices, (67) 1, p.377-382Publication Near hysteresis-free negative capacitance InGaAs tunnel FETs with enhanced digital and analog figures of merit below Vdd=400mV
Proceedings paper2018-12, IEEE International Electron Devices Meeting - IEDM, 1/12/2018, p.304-307