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Browsing by Author "Sakuraba, Masao"

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    Adsorption and desorption of hydrogen on Si(100) in H2 or Ar heat treatment

    Uto, Atsushi
    ;
    Sakuraba, Masao
    ;
    Caymax, Matty  
    ;
    Murota, Junichi
    Meeting abstract
    2010, 5th International Workshop on New Group IV Semiconductor Nanoelectronics, 29/01/2010, p.25-26
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    Change Of H-termination on wet cleaned Si9100) and Ge(100) by heat treatment In H2 or Ar

    Caymax, Matty  
    ;
    Uto, Atsushi
    ;
    Sakuraba, Masao
    ;
    Murota, Junichi
    Meeting abstract
    2008, 4th International SiGe Technology And Device Meeting, 11/05/2008, p.231-232
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    Evolution of the hydrogen terminated structure of the Si(100) surface and its interaction with H2 at 20 - 800°C

    Uto, Atsushi
    ;
    Sakuraba, Masao
    ;
    Caymax, Matty  
    ;
    Murota, Junichi
    Proceedings paper
    2010, 5th International SiGe Technology and Device Meeting - ISTDM, 24/05/2010

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