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Browsing by Author "Salm, C."

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    Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

    Zhichun, Wang
    ;
    Ackaert, J.
    ;
    Salm, C.
    ;
    de Backer, E.
    ;
    Van den Bosch, Geert  
    ;
    Zawalski, Wade
    Proceedings paper
    2002, Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA, 8/07/2002, p.242-245
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    Mechanical stress evolution and the Blech length: 2D simulation of early electromigration effects

    Petrescu, Violeta
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    Mouthaan, T.
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    Schoenmaker, Wim
    ;
    Salm, C.
    Journal article
    1998, Microelectronics Reliability, (38) 6_8, p.1047-1050
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    Mechanical stress evolution and the Blech length: 2D simulation of early electromigration effects

    Petrescu, Violeta
    ;
    Mouthaan, T.
    ;
    Schoenmaker, Wim
    ;
    Salm, C.
    Proceedings paper
    1998, Proceedings of the 9th European Symposium on Reliability of Electron Devices and Failure Physics - ESREF, 5/10/1998, p.1047-1050

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