Browsing by Author "Saraswat, Krishna"
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Publication 56Gb/s germanium waveguide electro-absorption modulator
Journal article2016, Journal of Lightwave Technology, (34) 2, p.419-424Publication Characteristics of surface states and charge neutrality level in Ge
Journal article2009, Applied Physics Letters, (95) 25, p.252101Publication Experimental demonstration of high source velocity and its enhancement by uniaxial stress in Ge PFETs
Proceedings paper2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.215-216Publication On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
Journal article2008, IEEE Transactions on Electron Devices, (55) 2, p.547-556Publication On the high-field transport and uniaxial stress effect in Ge PFETs
Journal article2011, IEEE Transactions on Electron Devices, (58) 2, p.384-391