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Browsing by Author "St. Amour, A."

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    Co silicide formation on SiGeC/Si and SiGe/Si layers

    Donaton, R. A.
    ;
    Maex, Karen  
    ;
    Vantomme, Andre  
    ;
    Langouche, G.
    ;
    Morciaux, Y.
    ;
    St. Amour, A.
    ;
    Sturm, J. C.
    Journal article
    1997, Applied Physics Letters, 70, p.1266-1268
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    Comparison of Co silicidation on SiGe and SiGeC alloys

    Donaton, R. A.
    ;
    Maex, Karen  
    ;
    Vantomme, Andre  
    ;
    St. Amour, A.
    ;
    Sturm, J. C.
    Oral presentation
    1996, Materials Research Society Spring Meeting. Symposium F on GeSi and Related Compounds; April 9-11, 1996; San Francisco, Calif., U
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    Microstructural studies of Co silicide layers formed on SiGe and SiGeC

    Jin, S.
    ;
    Bender, Hugo  
    ;
    Donaton, R. A.
    ;
    Maex, Karen  
    ;
    Vantomme, Andre  
    ;
    Langouche, G.
    ;
    St. Amour, A.
    Proceedings paper
    1997, Structure and Evolution of Surfaces, 2/12/1996, p.481-486
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    Microstructural studies of Co silicide layers formed on SiGe and SiGeC

    Jin, S.
    ;
    Bender, Hugo  
    ;
    Donaton, R. A.
    ;
    Maex, Karen  
    ;
    Vantomme, Andre  
    ;
    Langouche, G.
    ;
    St. Amour, A.
    Proceedings paper
    1997, Control of Semiconductor Surfaces and Interfaces, 2/12/1996, p.359-364

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