Browsing by Author "Tischenko, V."

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A deep level study of high-temperature electron-irradiated n-type Cz silicon

Simoen, Eddy
;
Claeys, Cor
;
Neimash, V.
;
Kraitchinskii, A.
;
Kras'ko, M.
;
Tischenko, V.
;
Voitovych, V.
Proceedings paper
2004, Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003, 21/09/2003, p.367-372
Deep levels in high-temperature 1 MeV electron irradiated n-type czochralski silicon

Simoen, Eddy
;
Rafi, Joan Marc
;
Claeys, Cor
;
Neimash, V.
;
Kraitchinski, A.
;
Kras'ko, M.
;
Tischenko, V.
Journal article
2003, Japanese Journal of Applied Physics. Part 1: Regular Papers, (42) 3, p.7184-7188
High-temperature electron irradiation effects on the electrical parameters of n-type Cz silicon

Neimash, V.
;
Kraitchinskii, A.
;
Kras'ko, N.
;
Tischenko, V.
;
Voitovych, V.
;
Simoen, Eddy
;
Claeys, Cor
Meeting abstract
2002, Belgische Natuurkundige Vereniging / Société Belge de Physique: General Scientific Meeting, 5/06/2002, p.CM1-6
High-temperature electron-irradiation induced deep levels in n-type Cz silicon

Simoen, Eddy
;
Claeys, Cor
;
Neimash, V.
;
Kraitchinskii, A.
;
Kras'ko, M.
;
Tischenko, V.
;
Voitovych, V.
Meeting abstract
2003, International Scientific Meeting Belgian Physical Society, 27/05/2003, p.CM1-17
Impact of high-temperature electron irradiation on the electrical parameters of n-type CZ silicon

Neimash, V.
;
Kraitshinskii, A.
;
Kras'ko, N.
;
Tischenko, V.
;
Voitovych, V.
;
Simoen, Eddy
;
Claeys, Cor
Proceedings paper
2002, High Purity Silicon VII, 20/10/2002, p.336-346