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Browsing by Author "Valenza, M."

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    Contributions of channel gate and overlap gate currents on 1/f gate current noise for thin gate oxide p-MOSFETs

    Martinez, F.
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    Laigle, A.
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    Hoffmann, A.
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    Valenza, M.
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    Veloso, Anabela  
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    Jurczak, Gosia  
    Proceedings paper
    2005, Noise and Fluctuations: 18th International Conference on Noise and Fluctuations - ICNF, 19/09/2005, p.243-246
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    DC and Noise Behaviour of Short-Chanenl SOI MOSFETs

    Valenza, M.
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    Barros, C.
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    Simoen, Eddy  
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    Claeys, C.
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    van Dinther, Cees
    Oral presentation
    1995, 2nd ELEN Workshop; October 25-27, 1995; Grenoble, France.
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    Effect of Schottky barrier alteration on the low-frequency noise of InP-based HEMT's

    van Meer, Hans
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    Valenza, M.
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    van der Zanden, Koen
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    De Raedt, Walter  
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    Simoen, Eddy  
    Journal article
    1998, IEEE Electron Device Letters, (19) 10, p.370-372
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    Empirical modeling of the low-frequency noise behaviour of InP-baseds HEMTs

    van Meer, Hans
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    Simoen, Eddy  
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    van der Zanden, Koen
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    De Raedt, Walter  
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    Valenza, M.
    ;
    Kaufman, L.
    Proceedings paper
    1998, Proceedings of the 28th European Solid-State Device Research Conference - ESSDERC'98, 8/09/1998, p.412-415
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    Excess noise behaviour in short n-channel SOI MOSFET's

    Valenza, M.
    ;
    Barros, C.
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    Rigaud, D.
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    Simoen, Eddy  
    ;
    Claeys, Cor
    Proceedings paper
    1997, Noise in Physical Systems and 1/f Fluctuations: Proceedings of the 14th International Conference, 14/07/1997, p.265-269
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    Low-frequency drain current noise behavior of InP-based MODFET's in the linear and saturation regime

    van Meer, Hans
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    Simoen, Eddy  
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    Valenza, M.
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    van der Zanden, Koen
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    De Raedt, Walter  
    Journal article
    1998, IEEE Trans. Electron Devices, (45) 12, p.2475-2482
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    Low-frequency gate current noise of InP based HEMTs

    Simoen, Eddy  
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    van Meer, Hans
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    Valenza, M.
    ;
    van der Zanden, Koen
    ;
    De Raedt, Walter  
    Journal article
    1999, Solid-State Electronics, (43) 9, p.1797-1800

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