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Browsing by Author "Van Hoecke, T."

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    Study of point defects in silicon by means of positron annihilation with core electrons

    Kuriplach, J.
    ;
    Van Hoecke, T.
    ;
    Van Waeyenberge, B.
    ;
    Dauwe, C.
    ;
    Segers, D.
    ;
    Balcaen, N.
    ;
    Morales, A. L.
    Proceedings paper
    1997, Proceedings 11th International Conference on Positron Annihilation - ICPA-11, 20/05/1997, p.605-607

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