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Browsing by Author "Vandenberghe, William G."

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    Ab initio modeling of few-layer dilute magnetic semiconductors

    Tiwari, Sabyasachi  
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    Van de Put, Maarten L.
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    Soree, Bart  
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    Vandenberghe, William G.
    Proceedings paper
    2021, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), SEP 27-29, 2021, p.141-145
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    Ab-Initio Study of Magnetically Intercalated Platinum Diselenide: The Impact of Platinum Vacancies

    Reyntjens, Peter  
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    Tiwari, Sabyasachi  
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    van de Put, Maarten L.
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    Soree, Bart  
    Journal article
    2021, MATERIALS, (14) 15
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    Ab-initio Study of Magnetically Intercalated Tungsten Diselenide

    Reyntjens, Peter D.
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    Tiwari, Sabyasachi  
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    Van de Put, Maarten L.
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    Soree, Bart  
    Proceedings paper
    2020, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), SEP 23-OCT 06, 2020, p.97-100
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    Au-MoS2 contacts: Quantum transport simulations using a continuum description

    Reyntjens, Peter D.
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    Reyntjens, Peter  
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    Van de Put, Maarten L.
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    Van de Put, Maarten  
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    Baikadi, Pranay
    Journal article
    2023, JOURNAL OF APPLIED PHYSICS, (134) 9, p.Art. 095702
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    Computing Curie temperature of two-dimensional ferromagnets in the presence of exchange anisotropy

    Tiwari, Sabyasachi  
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    Vanherck, Joren  
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    Van de Put, Maarten L.
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    Vandenberghe, William G.
    Journal article
    2021, PHYSICAL REVIEW RESEARCH, (3) 4, p.043024
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    Critical behavior of the ferromagnets CrI3, CrBr3, and CrGeTe3 and the antiferromagnet FeCl2: A detailed first-principles study

    Tiwari, Sabyasachi  
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    Van de Put, Maarten L.
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    Soree, Bart  
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    Vandenberghe, William G.
    Journal article
    2021, PHYSICAL REVIEW B, (103) 1, p.014432
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    Image-force barrier lowering in top- and side-contacted two-dimensional materials

    Deylgat, Emeric  
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    Chen, Edward
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    Fischetti, Massimo, V
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    Soree, Bart  
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    Vandenberghe, William G.
    Journal article
    2022, SOLID-STATE ELECTRONICS, (198) December, p.Art. 108458
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    Image-force barrier lowering of Schottky barriers in two-dimensional materials as a function of metal contact angle

    Evans, Sarah R.
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    Deylgat, Emeric  
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    Chen, Edward
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    Vandenberghe, William G.
    Journal article
    2023, PHYSICAL REVIEW APPLIED, (23) 4, p.Art. 044003
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    Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers

    Tiwari, Sabyasachi  
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    Van de Put, Maarten L.
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    Soree, Bart  
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    Vandenberghe, William G.
    Journal article
    2021, NPJ 2D MATERIALS AND APPLICATIONS, (5) 1, p.Art.54
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    Magnetic properties and critical behavior of magnetically intercalated WSe2: a theoretical study

    Reyntjens, Peter  
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    Tiwari, Sabyasachi  
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    van de Put, Maarten L.
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    Soree, Bart  
    Journal article
    2021, 2D MATERIALS, (8) 2, p.025009
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    Phonon-assisted Zener tunneling in a cylindrical nanowire transistor

    Carrillo-Nunez, Hamilton
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    Magnus, Wim  
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    Vandenberghe, William G.
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    Soree, Bart  
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    Peeters, Francois
    Journal article
    2013, Journal of Applied Physics, (113) 18, p.184507
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    Phonon-assisted Zener tunneling in a p-n diode silicon nanowire

    Carrillo-Nunez, Hamilton
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    Magnus, Wim  
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    Vandenberghe, William G.
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    Soree, Bart  
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    Peeters, Francois
    Journal article
    2013, Solid-State Electronics, 97, p.196-200
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    Quantum Transport Study of Contact Resistance of Edge- and Top-Contacted Two-Dimensional Materials

    Deylgat, Emeric  
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    Chen, Edward
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    Soree, Bart  
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    Vandenberghe, William G.
    Proceedings paper
    2023, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), SEP 27-29, 2023, p.45-48
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    Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn-, V-, and Fe-Doped WSe2

    Tiwari, Sabyasachi  
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    van de Put, Maarten
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    Soree, Bart  
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    Hinkle, Christopher
    Journal article
    2024, ACS APPLIED MATERIALS & INTERFACES, (16) 4, p.4991-4998
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    Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation

    Bizindavyi, Jasper  
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    Verhulst, Anne  
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    Soree, Bart  
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    Vandenberghe, William G.
    Journal article
    2021, COMMUNICATIONS PHYSICS, (4) 1, p.86
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    Three-Dimensional-Topological-Insulator Tunnel Diodes

    Fluckey, Stephen P.
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    Tiwari, Sabyasachi  
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    Hinkle, Christopher L.
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    Vandenberghe, William G.
    Journal article
    2022, PHYSICAL REVIEW APPLIED, (18) 6, p.064037
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    Towards Low Contact Resistance Metal Transition-Metal Dichalcogenide Contacts - A Quantum Transport Study

    Baikadi, Pranay
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    Kim, Raseong
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    Reyntjens, Peter  
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    Penumatcha, Ashish Verma
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    Van de Put, Maarten  
    Proceedings paper
    2024, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), SEP 24-27, 2024
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    Ultrascaled graphene-capped interconnects: a quantum mechanical study

    Reyntjens, Peter  
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    Van de Put, Maarten  
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    Vandenberghe, William G.
    ;
    Soree, Bart  
    Proceedings paper
    2023, IEEE International Interconnect Technology Conference (IITC) / IEEE Materials for Advanced Metallization Conference (MAM), MAY 22-25, 2023

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