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Browsing by Author "Vellas, N."

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    ANN model for AlGaN/GaN HEMTs constructed from near-optimal-load large-signal measurements

    Schreurs, Dominique  
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    Verspecht, Jan
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    Vandamme, E.
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    Vellas, N.
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    Gaquiere, C.
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    Germain, Marianne
    Proceedings paper
    2003, IEEE International Microwave Symposium Digest - MTT-S, 8/06/2003, p.447-450
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    First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

    Werquin, M.
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    Vellas, N.
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    Guhel, Y.
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    Ducatteau, D.
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    Boudart, B.
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    Pesant, J.C.
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    Bougrioua, Z.
    Journal article
    2005, Microwave and Optical Technology Letters, (46) 4, p.311-315
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    High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

    Werquin, W.
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    Gaquiere, C.
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    Guhel, Y.
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    Vellas, N.
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    Theron, D.
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    Boudart, B.
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    Hoel, V.
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    Germain, Marianne
    Journal article
    2005, Electronics Letters, (41) 1, p.46-47
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    High power performances of AlGaN/GaN HEMTs on Sapphire Substrate at Ft=4GHz

    Vellas, N.
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    Gaquire, C.
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    Guhel, Y.
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    Werquin, M.
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    Ducatteau, D.
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    Boudart, B.
    ;
    de Jaeger, J.C.
    Proceedings paper
    2002, Proceedings of the IEEE GaAs 2002 Conference, 23/09/2002, p.25-28
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    Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps

    Guhel, Y.
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    Boudart, B.
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    Vellas, N.
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    Gaquiere, C.
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    Delos, E.
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    Ducatteau, D.
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    Bougrioua, Z.
    Journal article
    2005, Solid-State Electronics, (19) 10, p.1589-1594
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    Influence d'une passivation précédée d'un traitement de surface sur le comportement électrique en regime statique d'un HEMT AlGaN/GaN

    Guhel, Y.
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    Boudart, B.
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    Vellas, N.
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    Gaquiere, C.
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    Delos, E.
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    Ducateau, D.
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    Bougrioua, Z.
    Oral presentation
    2003, Journées Nationales Micro-Ondes - JNM
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    Microwave performances on gallium nitride based HEMT devices

    Gaquiere, C.
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    Vellas, N.
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    Werquin, M.
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    Ducatteau, D.
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    Delos, E.
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    Chartier, E.
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    Lancereau, D.
    Oral presentation
    2004, WS GAAS02 Workshop: Wide Bandgap Research for Microwave Applications: Materials, Device & Circuit Issues
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    Premiers résultats de puissance à 4GHz obtenus sur HEMTs AlGaN/GaN en technologie planar

    Vellas, N.
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    Guhel, Y.
    ;
    Gaquiere, C.
    ;
    Boudart, B.
    ;
    Pesant, J.C.
    ;
    Bougrioua, Z.
    ;
    Germain, Marianne
    Oral presentation
    2003, Journées Nationales Micro-Ondes

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