Browsing by Author "Versluys, J."
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Publication Analysis of oxygen thermal donor formation in n-type CZ silicon
Proceedings paper2003, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes, 28/04/2003, p.96-105Publication Deep levels in high-temperature 1 MeV electron irradiated n-type czochralski silicon
; Publication DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon
Proceedings paper2005, Gettering and Defect Engineering in Semiconductor Technology XI. Proceedings of the 11th International Autumn Meeting, 25/09/2005, p.547-552Publication High-temperature electron-irradiation induced deep levels in n-type Cz silicon
; Publication Hydrogen-induced thermal donor formation in n-type oxygenated high-resistivity FZ silicon
Proceedings paper2002, Proceedings of the 5th Annual Workshop on Semiconductor Advances for Future Electronics - SAFE, 26/11/2002, p.91-98Publication Impact of direct plasma hydrogenation on thermal donor formation in N-type CZ silicon
Journal article2005, Journal of the Electrochemical Society, (152) 1, p.G16-G24Publication Investigations by capacitance methods of n-Si irradiated by electrons at 450°C
Journal article2004, Ukrainian Journal of Physics, (49) 8, p.779-784