Browsing by Author "Volpe, P.N."

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Hall hole mobility in boron-doped homoepitaxial diamond

Pernot, J.
;
Volpe, P.N.
;
Omnès, F.
;
Muret, P.
;
Mortet, Vincent
;
Haenen, Ken
;
Teraji, T.
Journal article
2010, Physical Review B, (81) 20, p.205203
Mobility in homoepitaxial doped diamond

Pernot, J.
;
Volpe, P.N.
;
Omnes, F.
;
Muret, P.
;
Mortet, Vincent
;
Haenen, Ken
;
Teraji, T.
;
Koizumi, S.
Meeting abstract
2009, MRS Fall Meeting Symposium J: Diamond Electronics and Bioelectronics - Fundamentals to Applications III, 30/11/2009, p.J14.1
Why carrier mobility in diamond is larger than in Si or 4H-SiC

Pernot, J.
;
Volpe, P.N.
;
Gheeraert, E.
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Bustarret, E.
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Omnes, F.
;
Muret, P.
;
Mortet, V.
;
Haenen, Ken
Oral presentation
2011, 5th International Conference on New Diamond and Nano Carbons - NDNC