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Browsing by Author "Vosch, Tom"

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    Bandgap opening in oxygen plasma-treated graphene

    Nourbakhsh, Amirhasan
    ;
    Cantoro, Mirco
    ;
    Vosch, Tom
    ;
    Pourtois, Geoffrey  
    ;
    Clemente, Francesca
    Journal article
    2010, Nanotechnology, (21) 43, p.435203
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    Modified, semiconducting graphene in contact with a metal: characterization of the Schottky diode

    Nourbakhsh, Amirhasan
    ;
    Cantoro, Mirco
    ;
    Hadipour, Afshin  
    ;
    Vosch, Tom
    ;
    van der Veen, Marleen  
    Journal article
    2010, Applied Physics Letters, (97) 16, p.163101
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    Opening of a tunable bandgap in graphene via oxygen plasma treatment: a building block for graphene-based electronics

    Nourbakhsh, Amirhasan
    ;
    Cantoro, Mirco
    ;
    Pourtois, Geoffrey  
    ;
    Hadipour, Afshin  
    Meeting abstract
    2010, MRS Fall Meeting Symposium C: Fundamentals of Low-Dimensional Carbon Nanomaterials, 29/11/2010, p.C9.3
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    Single layer vs. bilayer graphene: a comparative study of the effects of oxygen plasma treatment on their eectronic and optical properties

    Nourbakhsh, Amirhasan
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    Cantoro, Mirco
    ;
    Klekachev, Alexander
    ;
    Pourtois, Geoffrey  
    ;
    Vosch, Tom
    Journal article
    2011, Journal of Physical Chemistry C, (115) 33, p.16619-16624
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    Transition from metallic to semiconducting behavior in oxygen plasma-treated single-layer graphene

    Nourbakhsh, Amirhasan
    ;
    Cantoro, Mirco
    ;
    Vosch, Tom
    ;
    Hofkens, johan
    ;
    Pourtois, Geoffrey  
    Proceedings paper
    2011, Interface Engineering for Post-CMOS Emerging Channel Materials, 25/04/2011, p.1336-p02-07
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    Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing

    Nourbakhsh, Amirhasan
    ;
    Cantoro, Mirco
    ;
    Klekachev, Alexander
    ;
    Clemente, Francesca
    ;
    Soree, Bart  
    Journal article
    2010, Journal of Physical Chemistry C, (114) 15, p.6894-6900

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