Browsing by Author "Voytovych, V."
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Publication Electrically active defects in irradiated n-Type Czochralski silicon doped with group IV impurities
Oral presentation2004, Workshop on Defects Relevant to Engineering Advanced Silicon-Based DevicesPublication Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities
Journal article2005, Journal of Physics: Condensed Matter, (17) 22, p.S2255-S2266Publication On the effect of lead on irradiation induced defects in silicon
Proceedings paper2005, Gettering and Defect Engineering in Semiconductor Technology XI. Proceedings of the 11th International Autumn Meeting, 25/09/2005, p.373-378Publication Oxygen precipitation and thermal donor formation in Pb and C-doped n-type Czochralski silicon
;Neimash, M.V. ;Kras'ko, M. ;Kraitchinskii, A. ;Voytovych, V. ;Kabaldin, O. ;Tsmots, V.Proceedings paper2004-10, High Purity Silicon VIII, 3/10/2004, p.286-293Publication Radiation-induced deep levels in lead and tin doped n-type czochralski silicon
Proceedings paper2004, High Purity Silicon VIII, 3/10/2004, p.395-406