Browsing by Author "Voytovych, V."
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Publication Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities
Journal article2005, Journal of Physics: Condensed Matter, (17) 22, p.S2255-S2266Publication Electrically active defects in irradiated n-Type Czochralski silicon doped with group IV impurities
Oral presentation2004, Workshop on Defects Relevant to Engineering Advanced Silicon-Based DevicesPublication On the effect of lead on irradiation induced defects in silicon
Proceedings paper2005, Gettering and Defect Engineering in Semiconductor Technology XI. Proceedings of the 11th International Autumn Meeting, 25/09/2005, p.373-378Publication Oxygen precipitation and thermal donor formation in Pb and C-doped n-type Czochralski silicon
;Neimash, M.V. ;Kras'ko, M. ;Kraitchinskii, A. ;Voytovych, V. ;Kabaldin, O. ;Tsmots, V.Proceedings paper2004-10, High Purity Silicon VIII, 3/10/2004, p.286-293Publication Radiation-induced deep levels in lead and tin doped n-type czochralski silicon
Proceedings paper2004, High Purity Silicon VIII, 3/10/2004, p.395-406