Browsing by Author "Werquin, M."

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First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

Werquin, M.
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Vellas, N.
;
Guhel, Y.
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Ducatteau, D.
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Boudart, B.
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Pesant, J.C.
;
Bougrioua, Z.
Journal article
2005, Microwave and Optical Technology Letters, (46) 4, p.311-315
High power performances of AlGaN/GaN HEMTs on Sapphire Substrate at Ft=4GHz

Vellas, N.
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Gaquire, C.
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Guhel, Y.
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Werquin, M.
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Ducatteau, D.
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Boudart, B.
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de Jaeger, J.C.
Proceedings paper
2002, Proceedings of the IEEE GaAs 2002 Conference, 23/09/2002, p.25-28
Microwave performances on gallium nitride based HEMT devices

Gaquiere, C.
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Vellas, N.
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Werquin, M.
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Ducatteau, D.
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Delos, E.
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Chartier, E.
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Lancereau, D.
Oral presentation
2004, WS GAAS02 Workshop: Wide Bandgap Research for Microwave Applications: Materials, Device & Circuit Issues