Browsing by Author "Yang, D."

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Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

Uleckas, A.
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Gaubas, E.
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Rafi, J.M.
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Chen, J.
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Yang, D.
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Ohyama, H.
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Simoen, Eddy
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Vanhellemont, J.
Journal article
2011, Solid State Phenomena, 178-179, p.347-352
Diode characteristics and thermal donor formation in germanium-doped silicon substrates

Rafi, J.-M.
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Vanhellemont, J.
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Simoen, Eddy
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Chen, Jimmy
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Yang, D.
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Zabala, M.
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China, E.
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Lechon, M.
Oral presentation
2011, 26th International Conference on Defects in Semiconductors - ICDS
Germanium doping for improved silicon substrates and devices

Vanhellemont, J.
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Chen, J.
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Lauwaert, J.
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Vrielinck, H.
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Xu, W.
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Yang, D.
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Rafi, J.M.
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Ohyama, H.
Journal article
2011, Journal of Crystal Growth, (317) 1, p.8-15
Germanium doping of Si substrates for improved device characteristics and yield

Vanhellemont, Jan
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Chen, J.
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Xu, W.
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Yang, D.
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Rafi, J.M.
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Ohyama, H.
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Simoen, Eddy
Proceedings paper
2010, China Semiconductor Technology International Conference - CSTIC, 18/03/2010, p.1041-1046