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Browsing by Author "Yianni, S."

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    Holes in silicon are heavier than expected: Transport properties of extremely high mobility electrons and holes in silicon MOSFETs

    Wendoloski, J. P.
    ;
    Hillier, J.
    ;
    Liles, S. D.
    ;
    Rendell, M. J.
    ;
    Ashlea-Alava, Y.
    ;
    Raes, B.
    ;
    Li, R.
    Journal article
    2026, PHYSICAL REVIEW B, (113) 4, p.045302

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