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Browsing by Author "Zhang, Jianfu"

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    Abnormal VTH/VFB shift caused by as-grown mobile charges in Al2O3 and its impacts on Flash memory cell operations

    Tang, Baojun
    ;
    Zhang, Weidong
    ;
    Zhang, Jianfu
    ;
    Van den Bosch, Geert  
    ;
    Govoreanu, Bogdan  
    Proceedings paper
    2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.219-222
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    Evaluation and solutions for P/E window instability induced by electron trapping in high-k inter-gate dielectrics of flash memory cells

    Tang, Baojun
    ;
    Zhang, Weidong
    ;
    Degraeve, Robin  
    ;
    Breuil, Laurent  
    ;
    Blomme, Pieter  
    ;
    Zhang, Jianfu
    Journal article
    2014, IEEE Transactions on Electron Devices, (61) 5, p.1299-1306
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    Experimental evidence toward understanding charge pumping signals in 3-D devices with Poly-Si channel

    Tang, Baojun
    ;
    Zhang, Weidong
    ;
    Toledano Luque, Maria
    ;
    Zhang, Jianfu
    ;
    Degraeve, Robin  
    ;
    Ji, Zhigang
    Journal article
    2014, IEEE Transactions on Electron Devices, (61) 5, p.1501-1507
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    Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations

    Tang, Baojun
    ;
    Zhang, Weidong
    ;
    Breuil, Laurent  
    ;
    Robinson, Colin
    ;
    Wang, Yunqi
    Journal article
    2014, Microelectronics Reliability, (54) 9_10, p.2258-2261

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